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公开(公告)号：US09165673B2
公开(公告)日：2015-10-20
申请号：US13795567
申请日：2013-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Je-Min Yu , Ho-Young Song , Sung-Min Seo , Sang-Joon Hwang
Abstract: A semiconductor memory device includes a memory cell array configured to store data including a verification code; a sensing unit configured to sense the stored data including the verification code; and a verification unit configured to determine whether the sensing unit is able to sense the stored data based on a sensing condition, wherein the verification unit is configured to determine whether the sensing unit is able to sense the stored data based on the sensing condition and a value of the verification code sensed by the sensing unit.
Abstract translation: 半导体存储器件包括：存储单元阵列，被配置为存储包括验证码的数据; 感测单元，被配置为感测存储的包括验证码的数据; 以及验证单元，被配置为基于感测条件来确定所述感测单元是否能够感测所存储的数据，其中所述验证单元被配置为基于所述感测条件来确定所述感测单元是否能够感测所存储的数据，以及 由感测单元感测的验证码的值。
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公开(公告)号：US09293218B2
公开(公告)日：2016-03-22
申请号：US14049399
申请日：2013-10-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Je-Min Yu , Sung-Min Seo , Ho-Young Song , Gil-Su Kim , Jong-Min Oh
CPC classification number: G11C17/08 , G11C16/04 , G11C16/0483 , G11C17/16 , G11C17/18 , G11C29/785
Abstract: Provided is a semiconductor memory device. The semiconductor includes a One Time Programmable (OTP) cell array, a converging circuit and a sense amplifier circuit. The OTP cell array includes a plurality of OTP cells connected to a plurality of bit lines, each bit line extending in a first direction. The converging includes a common node contacting a first bit line and a second bit line. The sense amplifier circuit includes a sense amplifier connected to the common node, the sense amplifier configured to amplify a signal of the common node.
Abstract translation: 提供了一种半导体存储器件。 该半导体包括一个可编程（OTP）单元阵列，一个会聚电路和一个读出放大器电路。 OTP单元阵列包括连接到多个位线的多个OTP单元，每个位线沿第一方向延伸。 收敛包括接触第一位线和第二位线的公共节点。 感测放大器电路包括连接到公共节点的读出放大器，该读出放大器配置成放大公共节点的信号。
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