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    High Voltage Semiconductor Device and Method of Forming the Same
    2.
    发明申请
    High Voltage Semiconductor Device and Method of Forming the Same 审中-公开
    高压半导体器件及其制造方法

    公开(公告)号：US20150048449A1

    公开(公告)日：2015-02-19

    申请号：US14321018

    申请日：2014-07-01

    申请人： Samsung Electronics Co., Ltd.

    发明人： Changki Jeon ,  Minsuk Kim ,  Jeongho Kim ,  Yongcheol Choi

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7816 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7817

    摘要： A high voltage semiconductor device includes a semiconductor substrate having a first conductivity type and including a low voltage part and a high voltage part, a semiconductor layer having a second conductivity type on the semiconductor substrate, a body region having the first conductivity type on the semiconductor layer, a first buried layer having the second conductivity type between the high voltage part of the semiconductor substrate and the semiconductor layer, and a second buried layer having the first conductivity type and having sidewalls inside sidewalls of the first buried layer and extending deeper into the substrate than the first buried layer. A surface of the body region adjacent the substrate is spaced apart from a surface of the second buried layer remote from the substrate such that a portion of the semiconductor layer is disposed therebetween.

    摘要翻译： 高电压半导体器件包括具有第一导电类型并包括低电压部分和高电压部分的半导体衬底，半导体衬底上具有第二导电类型的半导体层，半导体上具有第一导电类型的体区 在半导体衬底的高电压部分和半导体层之间具有第二导电类型的第一掩埋层和具有第一导电类型的第二掩埋层，并且在第一掩埋层的侧壁内侧延伸并延伸到 衬底比第一掩埋层。 与衬底相邻的本体区域的表面与远离衬底的第二掩埋层的表面间隔开，使得半导体层的一部分位于它们之间。