公开(公告)号：US10734380B2

公开(公告)日：2020-08-04

申请号：US16158797

申请日：2018-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Min Jeong ,  Kee-Sang Kwon ,  Jin-Wook Lee ,  Ki-Hyung Ko ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Ji-Won Yun

IPC: H01L27/088 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.

公开(公告)号：US20190043860A1

公开(公告)日：2019-02-07

申请号：US16158797

申请日：2018-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Min Jeong ,  Kee-Sang Kwon ,  Jin-Wook Lee ,  Ki-Hyung Ko ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Ji-Won Yun

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/423

Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.

公开(公告)号：US09613811B2

公开(公告)日：2017-04-04

申请号：US14525467

申请日：2014-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Jik Baek ,  Sang-Jine Park ,  Bo-Un Yoon ,  Young-Sang Youn ,  Ji-Min Jeong ,  Ji-Hoon Cha

IPC: H01L21/338 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L21/266 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66575

Abstract: A first protective layer, a mask layer, a second protective layer and a photoresist layer are sequentially formed on a substrate. A photoresist pattern is formed by partially removing the photoresist layer. An ion implantation mask is formed by sequentially etching the second protective layer, the mask layer and the first protective layer using the photoresist pattern. The ion implantation mask exposes the substrate. Impurities are implanted in an upper portion of the substrate exposed by the ion implantation mask.

公开(公告)号：US20150162197A1

公开(公告)日：2015-06-11

申请号：US14525467

申请日：2014-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Jik BAEK ,  Sang-Jine Park ,  Bo-Un Yoon ,  Young-Sang Youn ,  Ji-Min Jeong ,  Ji-Hoon Cha

IPC: H01L21/266 ,  H01L21/033 ,  H01L21/8234

CPC classification number: H01L21/266 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66575

Abstract: A first protective layer, a mask layer, a second protective layer and a photoresist layer are sequentially formed on a substrate. A photoresist pattern is formed by partially removing the photoresist layer. An ion implantation mask is formed by sequentially etching the second protective layer, the mask layer and the first protective layer using the photoresist pattern. The ion implantation mask exposes the substrate. Impurities are implanted in an upper portion of the substrate exposed by the ion implantation mask.

Abstract translation: 在基板上依次形成第一保护层，掩模层，第二保护层和光致抗蚀剂层。 通过部分去除光致抗蚀剂层形成光致抗蚀剂图案。 通过使用光致抗蚀剂图案依次蚀刻第二保护层，掩模层和第一保护层来形成离子注入掩模。 离子注入掩模暴露衬底。 将杂质植入由离子注入掩模暴露的衬底的上部。