公开(公告)号：US20170345825A1

公开(公告)日：2017-11-30

申请号：US15680960

申请日：2017-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Kee-Sang Kwon ,  Do-Hyoung Kim ,  Bo-Un Yoon ,  Keun-Hee Bai ,  Kwang-Yong Yang ,  Kyoung-Hwan Yeo ,  Yong-Ho Jeon

IPC: H01L27/11 ,  H01L29/165 ,  H01L29/161 ,  H01L29/16 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/762 ,  H01L27/092 ,  H01L27/088 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L27/1104 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1116 ,  H01L29/06 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848

Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

公开(公告)号：US20170271336A1

公开(公告)日：2017-09-21

申请号：US15616455

申请日：2017-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Yeon-Jin Gil ,  Ji-Won Yun ,  Won-Sang Choi

IPC: H01L27/092 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US10818522B2

公开(公告)日：2020-10-27

申请号：US15978303

申请日：2018-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Byung-Kwon Cho ,  Yong-Jhin Cho ,  Yong-Sun Ko ,  Yeon-Jin Gil ,  Kwang-Wook Lee

IPC: H01L21/302 ,  H01L21/67 ,  H01L21/66

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

公开(公告)号：US10297474B2

公开(公告)日：2019-05-21

申请号：US14183994

申请日：2014-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Kee-Sang Kwon ,  Doo-Sung Yun ,  Won-Sang Choi

IPC: H01L21/67

Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.

公开(公告)号：US20180374859A1

公开(公告)日：2018-12-27

申请号：US16115711

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Kee-Sang Kwon ,  Do-Hyoung Kim ,  Bo-Un Yoon ,  Keun-Hee Bai ,  Kwang-Yong Yang ,  Kyoung-Hwan Yeo ,  Yong-Ho Jeon

IPC: H01L27/11 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/06

CPC classification number: H01L27/1104 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1116 ,  H01L29/06 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848

Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

公开(公告)号：US10096605B2

公开(公告)日：2018-10-09

申请号：US15680960

申请日：2017-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Kee-Sang Kwon ,  Do-Hyoung Kim ,  Bo-Un Yoon ,  Keun-Hee Bai ,  Kwang-Yong Yang ,  Kyoung-Hwan Yeo ,  Yong-Ho Jeon

IPC: H01L29/06 ,  H01L27/11 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L21/762

Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

公开(公告)号：US10985036B2

公开(公告)日：2021-04-20

申请号：US15827144

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo Kim ,  Sang-Jine Park ,  Yong-Jhin Cho ,  Yeon-Jin Gil ,  Ji-Hoon Jeong ,  Byung-Kwon Cho ,  Yong-Sun Ko ,  Kun-Tack Lee

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

公开(公告)号：US10192973B2

公开(公告)日：2019-01-29

申请号：US15239200

申请日：2016-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Byung-Kwon Cho ,  Jeong-Nam Han

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L27/088 ,  H01L29/423

Abstract: A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

公开(公告)号：US10128246B2

公开(公告)日：2018-11-13

申请号：US15616455

申请日：2017-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Bo-Un Yoon ,  Ha-Young Jeon ,  Yeon-Jin Gil ,  Ji-Won Yun ,  Won-Sang Choi

IPC: H01L21/70 ,  H01L27/092 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L29/165 ,  H01L21/8238

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US10446561B2

公开(公告)日：2019-10-15

申请号：US16115711

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Kee-Sang Kwon ,  Do-Hyoung Kim ,  Bo-Un Yoon ,  Keun-Hee Bai ,  Kwang-Yong Yang ,  Kyoung-Hwan Yeo ,  Yong-Ho Jeon

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L21/762

Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.