公开(公告)号：US20160026744A1

公开(公告)日：2016-01-28

申请号：US14674416

申请日：2015-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Gyun KIM ,  Sung-Wook HWANG ,  Dae-Kwon KANG ,  Jae-Seok YANG ,  Ji-Young JUNG

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5063 ,  G06F17/5068 ,  H01L21/3086 ,  H01L27/0207

Abstract: A layout design method may include receiving predetermined values related to first to third normal fin designs extending in a first direction and arranged in parallel in a second direction perpendicular to the first direction, generating dummy fin designs based on the predetermined values, generating mandrel candidate designs based on the first to third normal fin designs and the dummy fin designs, decomposing the mandrel candidate designs to first and second mandrel mask designs, and generating a final mandrel mask design using one of the first and second mandrel mask designs that satisfies a predetermined condition. A first interval distance in the second direction between the first normal fin design and the second normal fin design may be different from a second interval distance in the second direction between the second normal fin design and the third normal fin design.

Abstract translation: 布局设计方法可以包括接收与在第一方向上延伸并在垂直于第一方向的第二方向并行布置的第一至第三正常翅片设计相关的预定值，基于预定值产生虚拟翅片设计，产生心轴候选设计 基于第一至第三正常翅片设计和虚拟翅片设计，将心轴候选设计分解为第一和第二心轴掩模设计，以及使用满足预定条件的第一和第二心轴掩模设计中的一个产生最终心轴掩模设计 。 在第一正常翅片设计和第二正常翅片设计之间的第二方向上的第一间隔距离可以不同于第二正常翅片设计和第三正常翅片设计之间的第二方向上的第二间隔距离。

公开(公告)号：US20130292650A1

公开(公告)日：2013-11-07

申请号：US13670001

申请日：2012-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Young JUNG ,  Joo-Young KIM ,  Hyeok KIM

IPC: H01L51/10 ,  H01L51/40

CPC classification number: H01L51/0004 ,  H01L51/0005 ,  H01L51/0533 ,  H01L51/102

Abstract: According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.

Abstract translation: 根据示例性实施例，制造有机薄膜晶体管的方法包括在基板上依次形成栅电极，栅极绝缘体，源电极和漏电极，在源极上形成第一自组装单层， 漏电极从第一自组装单层前体形成，在第二自组装单层前体上形成第二自组装单层，该第二自组装单层前体与第一自组装单层前体不同，并在第一自组装单层前体上形成有机半导体 自组装单层和第二自组装单层。 第一自组装单层和第二自组装单层可以在单个容器中同时或顺序形成。 可以根据该方法制造有机薄膜晶体管。 显示装置可以包括有机薄膜晶体管。