公开(公告)号：US20160359041A9

公开(公告)日：2016-12-08

申请号：US14642918

申请日：2015-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo Xu ,  Jing WANG ,  Woosung CHOI

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/26513 ,  H01L21/28035 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66356 ,  H01L29/66636 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845

Abstract: Tunnel field effect transistors include a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate; a channel region in the semiconductor substrate between the source region and the drain region; and a gate electrode on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type that is different from the first conductivity type, and a second region having an intrinsic conductivity type that is between the first region and the third region.

公开(公告)号：US20160338612A1

公开(公告)日：2016-11-24

申请号：US14729339

申请日：2015-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo XU ,  Jing WANG ,  Woosung CHOI

IPC: A61B5/0482 ,  H03F3/45 ,  H03F1/02

CPC classification number: H01L29/78624 ,  A61B5/0482 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845 ,  H03F1/0205 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2203/45116 ,  H03F2203/45118 ,  H03F2203/45288

Abstract: Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.

Abstract translation: 神经信号放大器包括耦合在输出端和输入端之间的运算放大器和反馈网络。 反馈网络包括呈现双向导电性的隧道场效应晶体管（“TFET”）伪电阻器。 TFET的漏极区域可以电连接到其栅电极，以提供作为电压极性的函数的电阻方面具有良好对称性的双向电阻器。

公开(公告)号：US20170077311A1

公开(公告)日：2017-03-16

申请号：US15358822

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo Xu ,  Jing WANG ,  Woosung CHOI

IPC: H01L29/786 ,  A61B5/0482 ,  H03F3/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/78624 ,  A61B5/0482 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845 ,  H03F1/0205 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2203/45116 ,  H03F2203/45118 ,  H03F2203/45288

Abstract: Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.

Abstract translation: 神经信号放大器包括耦合在输出端和输入端之间的运算放大器和反馈网络。 反馈网络包括呈现双向导电性的隧道场效应晶体管（“TFET”）伪电阻器。 TFET的漏极区域可以电连接到其栅电极，以提供作为电压极性的函数的电阻方面具有良好对称性的双向电阻器。

公开(公告)号：US20160197184A1

公开(公告)日：2016-07-07

申请号：US14642918

申请日：2015-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo Xu ,  Jing WANG ,  Woosung CHOI

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/26513 ,  H01L21/28035 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66356 ,  H01L29/66636 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845

Abstract: Tunnel field effect transistors include a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate; a channel region in the semiconductor substrate between the source region and the drain region; and a gate electrode on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type that is different from the first conductivity type, and a second region having an intrinsic conductivity type that is between the first region and the third region.

Abstract translation: 隧道场效应晶体管包括半导体衬底; 半导体衬底中的源极区; 半导体衬底中的漏区; 在所述源极区域和所述漏极区域之间的所述半导体衬底中的沟道区域; 以及在沟道区上方的半导体衬底上的栅电极。 源区包括具有第一导电类型的第一区域，具有不同于第一导电类型的第二导电类型的第三区域和位于第一区域和第三区域之间的具有本征导电类型的第二区域。