公开(公告)号：US20160133052A1

公开(公告)日：2016-05-12

申请号：US14934587

申请日：2015-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woosung CHOI ,  Hyuk KANG ,  Minji KIM ,  Dongil SON ,  Buseop JUNG ,  Jongho CHOI ,  Jooman HAN

IPC: G06T19/00

CPC classification number: G06T19/006 ,  G06F3/011 ,  G09G2354/00 ,  G09G2370/12 ,  G09G2380/10

Abstract: An electronic device providing information through a virtual environment is disclosed. The device includes: a display; and an information providing module functionally connected with the display, wherein the information providing module displays an object corresponding to an external electronic device for the electronic device through the display, obtains information to be output through the external electronic device, and provides contents corresponding to the information in relation to a region, on which the object is displayed.

Abstract translation: 公开了一种通过虚拟环境提供信息的电子设备。 该装置包括：显示器; 以及与显示器功能性连接的信息提供模块，其中信息提供模块通过显示器显示与电子设备的外部电子设备相对应的对象，获得通过外部电子设备输出的信息，并提供与 关于显示对象的区域的信息。

公开(公告)号：US20150194125A1

公开(公告)日：2015-07-09

申请号：US14590535

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woosung CHOI ,  Hyoungil KIM ,  Jungeun LEE

IPC: G09G5/00

CPC classification number: G09G5/003 ,  G09G2320/0261 ,  G09G2320/0613 ,  G09G2340/0435

Abstract: Methods and apparatuses are provided for adjusting output of a display. Data related to the display output is acquired. It is determined whether to adjust a screen refresh rate of the display based on the acquired data. The screen refresh rate is adjusted or maintained according to a result of the determination.

Abstract translation: 提供了用于调节显示器的输出的方法和装置。 获取与显示输出相关的数据。 基于获取的数据确定是否调整显示器的画面刷新率。 根据确定的结果调整或维持屏幕刷新率。

公开(公告)号：US20160359041A9

公开(公告)日：2016-12-08

申请号：US14642918

申请日：2015-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo Xu ,  Jing WANG ,  Woosung CHOI

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/26513 ,  H01L21/28035 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66356 ,  H01L29/66636 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845

Abstract: Tunnel field effect transistors include a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate; a channel region in the semiconductor substrate between the source region and the drain region; and a gate electrode on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type that is different from the first conductivity type, and a second region having an intrinsic conductivity type that is between the first region and the third region.

公开(公告)号：US20160338612A1

公开(公告)日：2016-11-24

申请号：US14729339

申请日：2015-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo XU ,  Jing WANG ,  Woosung CHOI

IPC: A61B5/0482 ,  H03F3/45 ,  H03F1/02

CPC classification number: H01L29/78624 ,  A61B5/0482 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845 ,  H03F1/0205 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2203/45116 ,  H03F2203/45118 ,  H03F2203/45288

Abstract: Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.

Abstract translation: 神经信号放大器包括耦合在输出端和输入端之间的运算放大器和反馈网络。 反馈网络包括呈现双向导电性的隧道场效应晶体管（“TFET”）伪电阻器。 TFET的漏极区域可以电连接到其栅电极，以提供作为电压极性的函数的电阻方面具有良好对称性的双向电阻器。

公开(公告)号：US20170161880A1

公开(公告)日：2017-06-08

申请号：US15039223

申请日：2015-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woosung CHOI ,  Jungeun LEE

IPC: G06T5/00 ,  G06T15/10 ,  H04N13/04 ,  G06T3/00

CPC classification number: G06T5/006 ,  G06T3/0031 ,  G06T3/0056 ,  G06T15/10 ,  G06T2200/04 ,  H04N5/14 ,  H04N9/3147 ,  H04N13/106 ,  H04N13/344

Abstract: A method and electronic device for processing an image in an electronic device. The method includes predicting the number of surfaces which can be partitioned in image data; determining an inverse distortion rendering method corresponding to the predicted number of surfaces as a method for inverse distortion rendering of the image data; rendering the image data to a distorted image based on the determined inverse distortion rendering method; and displaying the distorted image.

公开(公告)号：US20230356138A1

公开(公告)日：2023-11-09

申请号：US18086302

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woosung CHOI ,  Ji Man Kim ,  Hyeonji Moon ,  Jin Seo Park ,  Zhengyang Li ,  Junho Chung ,  Jeungwoo Han

IPC: B01D53/04 ,  B01J20/30 ,  B01J20/16

CPC classification number: B01D53/0407 ,  B01J20/3078 ,  B01J20/165 ,  B01D2253/108 ,  B01D2253/102

Abstract: Provided is a method of treating an exhaust gas including preparing a rotor provided with a zeolite-carbon composite therein, providing a mixed gas including an organic gas and an alkali gas in the rotor, adsorbing the organic gas and the alkali gas to the zeolite-carbon composite, and desorbing the organic gas and the alkali gas from the zeolite-carbon composite, and the zeolite-carbon composite includes a zeolite and a carbon layer on the zeolite.

公开(公告)号：US20230209700A1

公开(公告)日：2023-06-29

申请号：US18115992

申请日：2023-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyuk KIM ,  Sangdeok LEE ,  Woosung CHOI

IPC: H05K1/02 ,  H05K1/18 ,  H05K9/00

CPC classification number: H05K1/0216 ,  H05K1/181 ,  H05K9/0024 ,  H05K2201/10053 ,  H05K2201/1006

Abstract: Various embodiments of the present disclosure relate to a package structure capable of allowing a shield used for noise attenuation to be used for other purposes, in an electronic device in which components are arranged at high density, and an operation method for preventing/reducing noise radiation or detecting in advance defects in a manufacturing process using the same. For this, an electronic device may include: a printed circuit board (PCB), and a package disposed on the printed circuit board. The package may include: a ground pad and at least one shield pad connected to the printed circuit board, a laminated structure comprising a plurality of laminated ground layers electrically connected to the ground pad by at least one via hole, at least one electronic component disposed on an uppermost surface of the plurality of laminated ground layers, a shield covering the at least one electronic component, wherein the at least one component is not exposed to the outside, and at least one switch device comprising a switch including a first terminal electrically connected to the shield through a first conductor wiring, a second terminal electrically connected to one of the plurality of ground layers through a second conductor wiring, and a third terminal electrically connected to the shield pad through a third conductor wiring and disposed on the uppermost surface and configured to selectively connect the first terminal to the second terminal or the third terminal wherein the shield is connected to one of the one ground layer or the shield pad.

公开(公告)号：US20170077311A1

公开(公告)日：2017-03-16

申请号：US15358822

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo Xu ,  Jing WANG ,  Woosung CHOI

IPC: H01L29/786 ,  A61B5/0482 ,  H03F3/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/78624 ,  A61B5/0482 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845 ,  H03F1/0205 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2203/45116 ,  H03F2203/45118 ,  H03F2203/45288

Abstract: Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.

Abstract translation: 神经信号放大器包括耦合在输出端和输入端之间的运算放大器和反馈网络。 反馈网络包括呈现双向导电性的隧道场效应晶体管（“TFET”）伪电阻器。 TFET的漏极区域可以电连接到其栅电极，以提供作为电压极性的函数的电阻方面具有良好对称性的双向电阻器。

公开(公告)号：US20160197184A1

公开(公告)日：2016-07-07

申请号：US14642918

申请日：2015-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nuo Xu ,  Jing WANG ,  Woosung CHOI

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/26513 ,  H01L21/28035 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66356 ,  H01L29/66636 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/7843 ,  H01L29/7845

Abstract: Tunnel field effect transistors include a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate; a channel region in the semiconductor substrate between the source region and the drain region; and a gate electrode on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type that is different from the first conductivity type, and a second region having an intrinsic conductivity type that is between the first region and the third region.

Abstract translation: 隧道场效应晶体管包括半导体衬底; 半导体衬底中的源极区; 半导体衬底中的漏区; 在所述源极区域和所述漏极区域之间的所述半导体衬底中的沟道区域; 以及在沟道区上方的半导体衬底上的栅电极。 源区包括具有第一导电类型的第一区域，具有不同于第一导电类型的第二导电类型的第三区域和位于第一区域和第三区域之间的具有本征导电类型的第二区域。