公开(公告)号：US20210116802A1

公开(公告)日：2021-04-22

申请号：US16922328

申请日：2020-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhwan LEE ,  Jeonggil KIM ,  Sunghyup KIM

IPC: G03F1/64

Abstract: A pellicle for a reflective mask includes a pellicle body, a pellicle frame below the pellicle body to support the pellicle body, and a pattern structure in at least a part of a surface of the pellicle body, wherein the pattern structure includes a plurality of patterns.

公开(公告)号：US20230274943A1

公开(公告)日：2023-08-31

申请号：US18101336

申请日：2023-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changgil SON ,  Nathan STAFFORD ,  Jinhwan LEE ,  Hoyoung JANG

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/027

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0332 ,  H01L21/0271 ,  H01L21/31144

Abstract: An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2:


(R1)C≡N   [Formula 1]



wherein in Formula 1, R1 is a C2 to C3 linear or branched perfluoroalkyl group,






(R2)(R3)C═NH   [Formula 2]



wherein in Formula 2, each of R2 and R3 is independently a C1 to C2 linear perfluoroalkyl group.