公开(公告)号：US09324563B2

公开(公告)日：2016-04-26

申请号：US14299252

申请日：2014-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungmi Kim ,  Joo-Hyung Yang ,  Jaeho Kim ,  Jungsik Choi

IPC: G03F7/20 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768 ,  H01L27/108 ,  H01L27/115

CPC classification number: H01L21/0337 ,  G03F7/20 ,  G03F7/203 ,  G03F7/40 ,  G03F7/70466 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10891 ,  H01L27/11582

Abstract: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.

Abstract translation: 提供了形成图案的方法。 所述方法可以包括在衬底上顺序形成蚀刻目标层和光致抗蚀剂层，将光致抗蚀剂层的两个第一部分暴露于光以将两个第一部分转变成两个第一光致抗蚀剂图案，并将光致抗蚀剂层的第二部分暴露于 光以将第二部分变换成设置在两个第一光致抗蚀剂图案之间的第二光致抗蚀剂图案。 该方法还可以去除光致抗蚀剂层的部分，以使蚀刻目标层上的两个第一光致抗蚀剂图案和第二光致抗蚀剂图案露出。

公开(公告)号：US20150017807A1

公开(公告)日：2015-01-15

申请号：US14299252

申请日：2014-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungmi KIM ,  Joo-Hyung Yang ,  Jaeho Kim ,  Jungsik Choi

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  G03F7/20 ,  G03F7/203 ,  G03F7/40 ,  G03F7/70466 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10891 ,  H01L27/11582

Abstract: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.

Abstract translation: 提供了形成图案的方法。 所述方法可以包括在衬底上顺序形成蚀刻目标层和光致抗蚀剂层，将光致抗蚀剂层的两个第一部分暴露于光以将两个第一部分转变成两个第一光致抗蚀剂图案，并将光致抗蚀剂层的第二部分暴露于 光以将第二部分变换成设置在两个第一光致抗蚀剂图案之间的第二光致抗蚀剂图案。 该方法还可以去除光致抗蚀剂层的部分，以使蚀刻目标层上的两个第一光致抗蚀剂图案和第二光致抗蚀剂图案露出。