公开(公告)号：US20230041059A1

公开(公告)日：2023-02-09

申请号：US17857395

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONG-WAN KIM ,  Keonhee PARK ,  DONG-SIK PARK ,  Joonsuk PARK ,  JIHOON CHANG ,  HYEON-WOO JANG

IPC: H01L27/108

Abstract: A semiconductor device may include a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region, bit lines provided on the cell region and extended in a first direction parallel to a top surface of the substrate, bit line capping patterns provided on the bit lines, and a boundary pattern provided on the boundary region. End portions of the bit lines may be in contact with a first interface of the boundary pattern, and the bit line capping patterns may include the same material as the boundary pattern.

公开(公告)号：US20250081483A1

公开(公告)日：2025-03-06

申请号：US18636601

申请日：2024-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeseul LEE ,  Jongyeong MIN ,  Kyooho JUNG ,  Joonsuk PARK ,  Jiye BAEK ,  Jinwook LEE

IPC: H10B12/00

Abstract: An integrated circuit device includes a lower electrode, a dielectric film covering the lower electrode, an upper electrode covering the dielectric film, and a multilayered interface structure between the dielectric film and the upper electrode, wherein the multilayered interface structure includes a transition metal-aluminum (Al) complex oxide layer including a transition metal oxide layer in which Al atoms are dispersed, the transition metal-Al complex oxide layer being in contact with the dielectric film, and an upper interface layer including a metal oxide or a metal oxynitride, the upper interface layer being in contact with the transition metal-Al complex oxide layer.

公开(公告)号：US20250081431A1

公开(公告)日：2025-03-06

申请号：US18809483

申请日：2024-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwook LEE ,  Jongyeong MIN ,  Kyooho JUNG ,  Joonsuk PARK ,  Jiye BAEK ,  Yeseul LEE

IPC: H10B12/00

Abstract: An integrated circuit device comprising; a transistor on a substrate, and a capacitor structure electrically connected to the transistor. The capacitor structure includes a lower electrode, a lower interface film on the lower electrode, a capacitor dielectric film on the lower interface film, an upper interface film on the capacitor dielectric film, and an upper electrode on the upper interface film. The lower interface film includes a first lower interface layer including metal oxide doped with an impurity, a second lower interface layer including a material that is substantially the same as a material of the first lower interface layer and doped with nitrogen, and a third lower interface layer including a material that is identical to a material of the capacitor dielectric film and doped with nitrogen, the first to third lower interface layers being sequentially stacked on the lower electrode, and wherein the upper interface film includes a first upper interface layer including metal oxide, a second upper interface layer including a material that is identical to a material of the first upper interface layer and doped with nitrogen, and a third upper interface layer including a material that is identical to the material of the capacitor dielectric film and doped with nitrogen, the first to third upper interface layers being sequentially stacked on the upper electrode.

公开(公告)号：US20230039149A1

公开(公告)日：2023-02-09

申请号：US17747423

申请日：2022-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Wan KIM ,  Keonhee PARK ,  Dong-Sik PARK ,  Joonsuk PARK ,  Jihoon CHANG ,  Hyeon-Woo JANG

IPC: H01L27/108 ,  H01L21/3213

Abstract: Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a substrate including a peripheral block and cell blocks each including a cell center region, a cell edge region, and a cell middle region, and bit lines extending on each cell block in a first direction. The bit lines include center bit lines, middle bit lines, and edge bit lines. The bit line has first and second lateral surfaces opposite to each other in a second direction. The first lateral surface straightly extends along the first direction on the cell center region, the cell middle region, and the cell edge region. The second lateral surface straightly extends along the first direction on the cell center region and the cell edge region, and the second lateral surface extends along a third direction, that intersects the first direction and the second direction, on the cell middle region.