公开(公告)号：US10942447B2

公开(公告)日：2021-03-09

申请号：US15869976

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-wook Kim ,  Ju-hyun Lee ,  Byeong-sang Kim ,  Kyung-bin Park ,  Ki-ju Sohn ,  Ho Yu

IPC: G03F7/00

Abstract: A film frame, a system for manufacturing a display substrate, and a method of manufacturing a display substrate, the film frame including a pair of frame edges extending lengthwise in a first direction and arranged opposite to each other; a fixed end clamp connected to the pair of frame edges and extending lengthwise in a second direction perpendicular to the first direction; and a free end clamp between the pair of frame edges, the free end clamp extending lengthwise in the second direction and configured to be detachably coupled with the pair of frame edges, wherein the fixed end clamp includes a first magnetic fixer extending lengthwise in the second direction and a second magnetic fixer on the first magnetic fixer, and the free end clamp includes a third magnetic fixer extending lengthwise in the second direction and a fourth magnetic fixer on the third magnetic fixer.

公开(公告)号：US20180010243A1

公开(公告)日：2018-01-11

申请号：US15407129

申请日：2017-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-yun Lee ,  Ju-hyun Lee ,  Kee-soo Park ,  Kyu-hee Han ,  Seung-hun Lee ,  Byung-chul Jeon

IPC: C23C14/58 ,  H01L21/78 ,  C23C16/56 ,  C23C16/455 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C14/5813 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L21/78 ,  H01L22/26

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.

公开(公告)号：US10196738B2

公开(公告)日：2019-02-05

申请号：US15407129

申请日：2017-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-yun Lee ,  Ju-hyun Lee ,  Kee-soo Park ,  Kyu-hee Han ,  Seung-hun Lee ,  Byung-chul Jeon

IPC: C23C14/58 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/67 ,  H01L21/78 ,  H01L21/66 ,  C23C16/24 ,  C23C16/44 ,  C23C16/52

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.