公开(公告)号：US20180010243A1

公开(公告)日：2018-01-11

申请号：US15407129

申请日：2017-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-yun Lee ,  Ju-hyun Lee ,  Kee-soo Park ,  Kyu-hee Han ,  Seung-hun Lee ,  Byung-chul Jeon

IPC: C23C14/58 ,  H01L21/78 ,  C23C16/56 ,  C23C16/455 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C14/5813 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L21/78 ,  H01L22/26

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.

公开(公告)号：US10541182B2

公开(公告)日：2020-01-21

申请号：US15887186

申请日：2018-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeon-tae Kim ,  Do-hyung Kim ,  Kwang-hyun Yang ,  Chang-yun Lee ,  Young-uk Choi ,  Kee-soo Park ,  Eun-sok Choi

IPC: G01N21/95 ,  G01N21/88 ,  H01L21/66 ,  H01L21/687 ,  G01B11/24 ,  G01B11/06 ,  G01N21/55 ,  H01L21/67

Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.

公开(公告)号：US10196738B2

公开(公告)日：2019-02-05

申请号：US15407129

申请日：2017-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-yun Lee ,  Ju-hyun Lee ,  Kee-soo Park ,  Kyu-hee Han ,  Seung-hun Lee ,  Byung-chul Jeon

IPC: C23C14/58 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/67 ,  H01L21/78 ,  H01L21/66 ,  C23C16/24 ,  C23C16/44 ,  C23C16/52

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.