公开(公告)号：US20240224532A1

公开(公告)日：2024-07-04

申请号：US18462390

申请日：2023-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jumi BAK ,  Eun- Young LEE ,  Sunggil KIM

IPC: H10B43/40 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

CPC classification number: H10B43/40 ,  G11C16/0483 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00 ,  H01L2225/06506

Abstract: A semiconductor device includes a semiconductor substrate, a peripheral circuit structure including peripheral circuits integrated on the semiconductor substrate and first bonding pads connected to the peripheral circuits, and a cell array structure including second bonding pads bonded to the first bonding pads. The cell array structure includes separation structures extending in a first direction, a stack disposed between the separation structures, a source conductive pattern disposed on the stack, vertical structures penetrating the stack and connected to the source conductive pattern, and reflection structures, which are vertically spaced apart from the source conductive pattern and are overlapped with the separation structures. The stack includes interlayer insulating layers and gate patterns, which are vertically and alternately stacked on top of one another.