公开(公告)号：US20230326964A1

公开(公告)日：2023-10-12

申请号：US18056736

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong Kwan Baek ,  Jun Hyuk Lim ,  Jung Hwan Chun ,  Kyu-Hee Han ,  Jong Min Baek ,  Koung Min Ryu ,  Jung Hoo Shin ,  Sang Shin Jang

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/778

CPC classification number: H01L29/0673 ,  H01L29/778 ,  H01L29/78696 ,  H01L29/41733

Abstract: Semiconductor devices with improved performance and reliability and methods for forming the same are provided. The semiconductor devices include an active pattern extending in a first direction, gate structures spaced apart from each other in the first direction on the active pattern, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner extending along a sidewall of the source/drain contacts. A carbon concentration of the contact liner at a first point of the contact liner is different from a carbon concentration of the contact liner at a second point of the contact liner, and the first point is at a first height from an upper surface of the active pattern, the second point is at a second height from the upper surface of the active pattern, and the first height is smaller than the second height.

公开(公告)号：US12255094B2

公开(公告)日：2025-03-18

申请号：US17739114

申请日：2022-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Hyuk Lim ,  Jong Min Baek ,  Deok Young Jung ,  Sung Jin Kang ,  Jang Ho Lee

IPC: H01L23/522 ,  H01L21/768 ,  H01L21/8234

Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

公开(公告)号：US20230395667A1

公开(公告)日：2023-12-07

申请号：US18117837

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu-Hee HAN ,  Bong Kwan Baek ,  Jung Hwan Chun ,  Koung Min RYN ,  Jong Min Baek ,  Jung Hoo Shin ,  Jun Hyuk Lim ,  Sang Shin Jang

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/41733 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/41791 ,  H01L29/7851 ,  H01L29/41775

Abstract: Provided is a semiconductor device including an active pattern extended in a first direction, a plurality of gate structures including a gate electrode and a gate spacer disposed to be spaced apart from each other in the first direction on the active pattern and extended in a second direction, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner structure extended along a sidewall of the source/drain contact, being in contact with the sidewall of the source/drain contact. The contact liner structure includes a first contact liner and a second contact liner on the first contact liner. The first contact liner includes a first bottom portion, and a first vertical portion protruded from the first bottom portion and extended in a third direction. A lower surface of the contact liner structure is higher than an upper surface of the source/drain pattern.