公开(公告)号：US09612274B2

公开(公告)日：2017-04-04

申请号：US14187541

申请日：2014-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Hee Lee ,  Jong-Hyun Kim

IPC: G01R31/28

CPC classification number: G01R31/2817 ,  G01R31/2805

Abstract: A probe card including a multi-layered substrate, a plurality of needles, and a temperature controlling unit may be provided. The multi-layered substrate may include a test pattern through which a test current passes. The needles may be provided on the multi-layered substrate. The needles may be electrically connected to the test pattern and may be configured to contact an object so that the test current may be supplied to the object. The temperature controlling unit may provide the multi-layered substrate with at least one of a first temperature and a second temperature, the first temperature being higher than the second temperature. Thus, a time for setting a test temperature may be shortened. As a result, thermal deformation of the probe card and/or the object may be reduced or suppressed, and thus reliability of test result may be improved.

公开(公告)号：US08867275B2

公开(公告)日：2014-10-21

申请号：US13625114

申请日：2012-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Hwan Shin ,  Kitae Park ,  Hyun-Wook Park ,  Jun-Hee Lee

IPC: G11C16/06 ,  G11C11/56 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C16/06

Abstract: Disclosed is a flash memory device and programming method that includes; receiving buffer data and determining between a high-speed mode and a reliability mode for buffer data, and upon determining the reliability mode storing the buffer data in a first buffer region, and upon determining the high-speed mode storing the buffer data in a second buffer region. The memory cell array of the flash memory including a main region and a separately designated buffer region divided into the first buffer region and second buffer region.

Abstract translation: 公开了一种闪速存储器件和编程方法，包括： 接收缓冲器数据，并在缓冲器数据的高速模式和可靠性模式之间确定，并且在确定将缓冲器数据存储在第一缓冲区域中的可靠性模式时，并且在确定将第二缓冲器数据存储在第二缓冲器数据中的高速模式 缓冲区。 闪速存储器的存储单元阵列包括分为第一缓冲区域和第二缓冲区域的主区域和单独指定的缓冲区域。