公开(公告)号：US09299812B2

公开(公告)日：2016-03-29

申请号：US14591465

申请日：2015-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Suk Kim

IPC: H01L29/66 ,  H01L21/306 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/165

CPC classification number: H01L29/66818 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848

Abstract: Provided are methods of forming a semiconductor device having an embedded stressor. The method includes forming a fin active area on a substrate. A gate structure configured to cross the fin active area and cover a side surface of the fin active area, and a gate spacer on a sidewall of the gate structure are formed. Preliminary trenches are formed in the fin active area adjacent to both sides of the gate structure using an anisotropic etching process. An etching select area is formed by oxidizing the fin active area exposed to the preliminary trenches. Trenches are formed by removing the etching select area. A stressor is formed in each of the trenches.

Abstract translation: 提供了形成具有嵌入式应力源的半导体器件的方法。 该方法包括在衬底上形成翅片有源区。 栅极结构，其被配置为跨过鳍片有源区域并覆盖翅片有源区域的侧表面，并且形成栅极结构的侧壁上的栅极间隔物。 使用各向异性蚀刻工艺在与栅极结构的两侧相邻的翅片有源区域中形成初步沟槽。 通过氧化暴露于初始沟槽的翅片活动区域来形成蚀刻选择区域。 通过去除蚀刻选择区域形成沟槽。 在每个沟槽中形成应力源。

公开(公告)号：US10728712B2

公开(公告)日：2020-07-28

申请号：US15923207

申请日：2018-03-16

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

Inventor： Ho-Yeon Lee ,  Min-Young Chung ,  Hyung-Jin Choi ,  Sung-Hoon Kim ,  Jun-Suk Kim ,  Young-Kyo Baek ,  Jung-Je Son ,  Seung-Ri Jin ,  Han-Jun Kim ,  Kyung-Hoon Lee

IPC: H04W4/06 ,  H04W4/40 ,  H04L29/06 ,  H04W24/10 ,  H04W4/02 ,  H04W76/40 ,  H04W84/04 ,  H04W88/16 ,  H04W72/00 ,  H04W64/00

Abstract: A method for providing a multimedia broadcast/multicast service (MBMS) to a terminal related to a vehicle by a broadcast and multicast service center (BM-SC) is provided. The method includes identifying at least one candidate service area that the terminal is predicted to pass through, and transmitting, to an MBMS-gateway (MBMS-GW), a request for configuring the radio bearer of the at least one candidate service area.

公开(公告)号：US20150140757A1

公开(公告)日：2015-05-21

申请号：US14323007

申请日：2014-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Suk Kim ,  Kee-Moon Chun

IPC: H01L29/66 ,  H01L21/67

CPC classification number: H01L29/66545 ,  H01J37/32669 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7854

Abstract: Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming preliminary trenches adjacent opposing sides of an active region. The method includes forming etching selection regions in portions of the active region that are exposed after forming the preliminary trenches. The method includes forming trenches by removing the etching selection regions. Moreover, the method includes forming a stressor in the trenches. Related apparatuses are also provided.

Abstract translation: 提供了形成半导体器件的方法。 形成半导体器件的方法包括在有源区的相对侧邻近地形成预备沟槽。 该方法包括在形成预备沟槽之后暴露的有源区的部分形成蚀刻选择区。 该方法包括通过去除蚀刻选择区域来形成沟槽。 此外，该方法包括在沟槽中形成应力源。 还提供了相关装置。

公开(公告)号：US10455589B2

公开(公告)日：2019-10-22

申请号：US15572909

申请日：2016-05-13

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNTDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Seung-Hoon Park ,  Min-Young Chung ,  Jun-Suk Kim ,  Sunheui Ryoo ,  Byounghoon Jung

IPC: H04W72/04 ,  H04W28/02 ,  H04W72/08 ,  H04W72/14 ,  H04W74/00 ,  H04W74/08

Abstract: The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a high data transmission rate beyond a 4th generation communication system such as long term evolution (LTE). An operation method of a base station in a wireless communication system according to an embodiment of the present invention comprises the steps of: receiving at least one random access preamble from at least one terminal; and transmitting at least one message including a plurality of random access responses corresponding to the at least one random access preamble.

公开(公告)号：US09240460B2

公开(公告)日：2016-01-19

申请号：US14323007

申请日：2014-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Suk Kim ,  Kee-Moon Chun

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01J37/32

CPC classification number: H01L29/66545 ,  H01J37/32669 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7854

Abstract: Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming preliminary trenches adjacent opposing sides of an active region. The method includes forming etching selection regions in portions of the active region that are exposed after forming the preliminary trenches. The method includes forming trenches by removing the etching selection regions. Moreover, the method includes forming a stressor in the trenches. Related apparatuses are also provided.

Abstract translation: 提供了形成半导体器件的方法。 形成半导体器件的方法包括在有源区的相对侧邻近地形成预备沟槽。 该方法包括在形成预备沟槽之后暴露的有源区的部分形成蚀刻选择区。 该方法包括通过去除蚀刻选择区域来形成沟槽。 此外，该方法包括在沟槽中形成应力源。 还提供了相关装置。