公开(公告)号：US11330020B2

公开(公告)日：2022-05-10

申请号：US16978350

申请日：2019-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinsub Park ,  Songkyu Kim ,  Yongwoon Moon ,  Kwangjae Woo ,  Insoo Lee ,  Junehee Lee

IPC: H04L29/06 ,  H04L65/10 ,  H04L65/1069 ,  H04L65/80 ,  H04N21/2343 ,  H04N21/643

Abstract: In various embodiments, an electronic device comprising a communication circuit, a processor, and a memory is disclosed. The memory may store instructions that, when executed, cause the processor to transmit, to a network, a first session initiation protocol (SIP) invite message including at least one dummy value by using the communication circuit, obtain channel state information by using the communication circuit, determine a codec for performing a packet based call on the basis of channel state information, and transmit, to the network, a second SIP invite message including information of the determined codec by using the communication circuit. Various other embodiments are also possible which are known from the specification.

公开(公告)号：US20150028430A1

公开(公告)日：2015-01-29

申请号：US14317289

申请日：2014-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junehee Lee ,  Sangjin Hyun ,  Jaeyeol Song ,  Hye-Lan Lee

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.

Abstract translation: 公开了半导体器件及其制造方法。 半导体器件在衬底上的栅极电介质图案和与衬底相对的栅极电介质图案上的栅极电极。 栅电极包括设置在栅极电介质图案上并包括铝的第一导电图案，以及设置在第一导电图案和栅极电介质图案之间的第二导电图案。 第二导电图案的铝浓度高于第一导电图案的铝浓度。 第二导电图案可以比第一导电图案更厚。

公开(公告)号：US10986222B2

公开(公告)日：2021-04-20

申请号：US16229540

申请日：2018-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Songkyu Kim ,  Yongwoon Moon ,  Insoo Lee ,  Junehee Lee ,  Sungho Seo ,  Kwangjae Woo ,  Youngil Chang ,  Bonggoo Jun

IPC: H04M1/253 ,  H04L29/06 ,  H04M7/00 ,  H04M1/725

Abstract: An electronic device is provided. The electronic device includes a display, at least one communication circuit, and at least one processor configured to control the display and the at least one communication circuit. The at least one processor is configured to obtain a communication state using the at least one communication circuit during a packet based voice call, and to stop transmitting data associated with at least one of a plurality of background applications which operate in a background of an operating system (OS) of the electronic device when the communication state meets a specified first condition.

公开(公告)号：US09337295B2

公开(公告)日：2016-05-10

申请号：US14317289

申请日：2014-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junehee Lee ,  Sangjin Hyun ,  Jaeyeol Song ,  Hye-Lan Lee

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.

Abstract translation: 公开了半导体器件及其制造方法。 半导体器件在衬底上的栅极电介质图案和与衬底相对的栅极电介质图案上的栅极电极。 栅电极包括设置在栅极电介质图案上并包括铝的第一导电图案，以及设置在第一导电图案和栅极电介质图案之间的第二导电图案。 第二导电图案的铝浓度高于第一导电图案的铝浓度。 第二导电图案可以比第一导电图案更厚。