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    ELECTRONIC DEVICE AND POWER BACK OFF CONTROL METHOD THEREOF
    1.
    发明申请
    ELECTRONIC DEVICE AND POWER BACK OFF CONTROL METHOD THEREOF 有权

    公开(公告)号：US20170164300A1

    公开(公告)日：2017-06-08

    申请号：US15347942

    申请日：2016-11-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung-Min LEE ,  Seung-In KANG ,  Jung-Min PARK ,  Han-Jun YI

    IPC: H04W52/18 ,  H01Q1/24 ,  H04L12/26 ,  H04W4/02

    CPC classification number: H04W52/18 ,  H01Q1/245 ,  H04B1/3838 ,  H04L43/16 ,  H04W4/026 ,  H04W4/027 ,  H04W52/367

    Abstract: According to various embodiments, an electronic device comprises: a housing including a first surface, a second surface facing in the opposite direction of the first surface, and side surfaces that surround at least a part of a space between the first surface and the second surface; a first sensor and a second sensor which are disposed in the housing or exposed through at least one surface; a communication circuit disposed in the housing; an antenna radiator electrically connected with the communication circuit; and a control circuit electrically connected with at least one of the first and second sensors, and the communication circuit, wherein the control circuit is configured to: transmit or receive, to or from an external device, a first signal output from the communication circuit, using the antenna radiator; detect, using the first sensor, whether an external object has approached within a predetermined distance at least a part of the antenna radiator to generate a second signal; detect, using the second sensor, an orientation of the electronic device to generate a third signal; and decrease the strength of the first signal, based on at least a part of the generated second signal and third signal.

    CIRCUIT, APPARATUS AND METHOD FOR ANTENNA MODE STEERING
    3.
    发明申请
    CIRCUIT, APPARATUS AND METHOD FOR ANTENNA MODE STEERING 有权
    电路，天线方向转向装置及方法

    公开(公告)号：US20140184440A1

    公开(公告)日：2014-07-03

    申请号：US13956915

    申请日：2013-08-01

    Applicant: Samsung Electronics Co. Ltd.

    Inventor： Jung-Min PARK ,  Min-Goo KIM ,  Tae-Yoon KIM ,  Chae-Man LIM ,  Jong-Han LIM

    IPC: H01Q25/04

    CPC classification number: H01Q25/04 ,  H01Q1/1257 ,  H01Q1/245 ,  H04B7/0814 ,  H04B7/0871

    Abstract: An Antenna Mode Steering (AMS) method in a signal receiving apparatus using at least one antenna is provided. The method includes measuring a received signal quality of a signal received through the at least one antenna for each of antenna modes available in the signal receiving apparatus, and selecting a specific antenna mode from among the antenna modes as an antenna mode to be used in the signal receiving apparatus based on the measured received signal quality.

    Abstract translation: 提供了使用至少一个天线的信号接收装置中的天线模式转向（AMS）方法。 该方法包括测量通过至少一个天线接收的信号的接收信号质量，用于在信号接收设备中可用的每个天线模式，并且从天线模式中选择特定天线模式作为在天线模式中使用的天线模式 基于所测量的接收信号质量的信号接收装置。

    METHOD FOR DATA TRANSMISSION USING CARRIER AGGREGATION, AND ELECTRONIC DEVICE THEREFOR
    5.
    发明申请
    METHOD FOR DATA TRANSMISSION USING CARRIER AGGREGATION, AND ELECTRONIC DEVICE THEREFOR 审中-公开

    公开(公告)号：US20200244292A1

    公开(公告)日：2020-07-30

    申请号：US16757113

    申请日：2018-10-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Min PARK ,  Hyunsoo KIM

    IPC: H04B1/04 ,  H04B7/0456 ,  H04B17/309

    Abstract: Various embodiments of the present disclosure relate to an apparatus and a method for data transmission using carrier aggregation (CA) in an electronic device. An operating method of an electronic device according to various embodiments of the present disclosure includes: determining a frequency band based on information regarding at least one of a rank or a service, which is applied to frequency bands used for CA; performing impedance matching with reference to the frequency band; and transmitting data by using antennas for which the impedance matching has been performed. Other embodiments are possible.

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130280881A1

    公开(公告)日：2013-10-24

    申请号：US13923470

    申请日：2013-06-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Weon-Hong KIM ,  Min-Woo SONG ,  Jung-Min PARK

    IPC: H01L49/02

    CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31641 ,  H01L27/10852 ,  H01L28/40

    Abstract: A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer.

    Abstract translation: 一种包括衬底的半导体器件; 基底上的底电极; 所述第一电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第一金属氧化物; 在所述第一电介质层上的第二电介质层，所述第二电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第二金属氧化物，其中所述第一金属氧化物和所述第二金属 氧化物是不同的材料; 第二电介质层上的第三电介质层，第三电介质层包括金属碳氮氧化物; 以及第三电介质层上的上电极。

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