Apparatus and method for canceling feedback in hearing aid
    4.
    发明授权
    Apparatus and method for canceling feedback in hearing aid 有权
    用于消除助听器反馈的装置和方法

    公开(公告)号:US09565500B2

    公开(公告)日:2017-02-07

    申请号:US14640638

    申请日:2015-03-06

    CPC classification number: H04R25/45 H04R25/554

    Abstract: A method of operating an electronic device is provided. The method includes transmitting, by the electronic device, a control signal for controlling a microphone sensitivity of a hearing aid, to the hearing aid, and transmitting a reception signal from a counterpart electronic device to the hearing aid.

    Abstract translation: 提供一种操作电子设备的方法。 该方法包括由电子设备发送用于控制助听器的麦克风灵敏度的控制信号,助听器,以及将来自对方电子设备的接收信号发送到助听器。

    Storage device and related programming method
    5.
    发明授权
    Storage device and related programming method 有权
    存储设备及相关编程方法

    公开(公告)号:US09466386B2

    公开(公告)日:2016-10-11

    申请号:US14336343

    申请日:2014-07-21

    CPC classification number: G11C16/225 G11C16/0483 G11C16/10

    Abstract: A method of programming a storage device comprises determining whether at least one open page exists in a memory block of a nonvolatile memory device, and as a consequence of determining that at least one open page exists in the memory block, closing the at least one open page through a dummy pattern program operation, and thereafter performing a continuous writing operation on the memory block.

    Abstract translation: 一种对存储设备进行编程的方法包括确定至少一个开放页面是否存在于非易失性存储器件的存储器块中,并且作为确定存储器块中存在至少一个打开页面的结果,关闭至少一个打开的 通过虚拟图案编程操作,然后对存储块进行连续写入操作。

    Nonvolatile memory devices and solid state drives including the same

    公开(公告)号:US10216932B2

    公开(公告)日:2019-02-26

    申请号:US15296169

    申请日:2016-10-18

    Abstract: A nonvolatile memory device includes a memory cell array, a voltage generator, and a control circuit. The voltage generator generates word-line voltages to be applied to the memory cell array. The control circuit generates control signals that control the voltage generator in response to a command and an address. The control circuit includes a hacking detection circuit. The hacking detection circuit disables an operation of the nonvolatile memory device when a hacking is detected, wherein the hacking is detected when an access sequence of the command and the address does not match a standard sequence of the nonvolatile memory device a consecutive number of times.

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