WET ETCHING METHOD AND METHOD OF  FABRICATING SEMICONDUCTOR DEVICE BY  USING THE SAME

    公开(公告)号:US20230230843A1

    公开(公告)日:2023-07-20

    申请号:US18095798

    申请日:2023-01-11

    CPC classification number: H01L21/31111 H01L29/66666 H10B80/00

    Abstract: A wet etching method includes: providing a structure including an etching target film into a process bath containing a first etching solution having a first phosphoric acid concentration; performing a first etching process for etching the etching target film with the first etching solution in the process bath; providing a second etching solution having a second phosphoric acid concentration different from the first phosphoric acid concentration by changing a phosphoric acid concentration in the first etching solution; performing a second etching process for etching the etching target film with the second etching solution in the process bath; providing a third etching solution having a third phosphoric acid concentration different from the first and second phosphoric acid concentrations by changing a phosphoric acid concentration in the second etching solution; and performing a third etching process for etching the etching target film with the third etching solution in the process bath.

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