公开(公告)号：US20230230843A1

公开(公告)日：2023-07-20

申请号：US18095798

申请日：2023-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeheon Kim ,  Kyunghyun Kim ,  Changsup Mun ,  Junyoul Yang ,  Sanghoon Jeong ,  Yongsik Chung ,  Seungcheol Chae

IPC: H01L21/311 ,  H01L29/66

CPC classification number: H01L21/31111 ,  H01L29/66666 ,  H10B80/00

Abstract: A wet etching method includes: providing a structure including an etching target film into a process bath containing a first etching solution having a first phosphoric acid concentration; performing a first etching process for etching the etching target film with the first etching solution in the process bath; providing a second etching solution having a second phosphoric acid concentration different from the first phosphoric acid concentration by changing a phosphoric acid concentration in the first etching solution; performing a second etching process for etching the etching target film with the second etching solution in the process bath; providing a third etching solution having a third phosphoric acid concentration different from the first and second phosphoric acid concentrations by changing a phosphoric acid concentration in the second etching solution; and performing a third etching process for etching the etching target film with the third etching solution in the process bath.