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1.发明授权公开(公告)号：US10297601B2
公开(公告)日：2019-05-21
申请号：US15351739
申请日：2016-11-15
发明人： Jin-Bum Kim , Myung-Gil Kang , Kang-Hun Moon , Cho-Eun Lee , Su-Jin Jung , Min-Hee Choi , Yang Xu , Dong-Suk Shin , Kwan-Heum Lee , Hoi-Sung Chung
IPC分类号： H01L27/11 , H01L29/66 , H01L29/78 , H01L23/528 , H01L27/088 , H01L29/08 , H01L29/161 , H01L29/45 , H01L23/485 , H01L21/8234 , H01L29/417 , H01L27/092 , H01L29/165
摘要： A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.
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2.发明授权公开(公告)号：US11469237B2
公开(公告)日：2022-10-11
申请号：US16388347
申请日：2019-04-18
发明人： Jin-Bum Kim , Myung-Gil Kang , Kang-Hun Moon , Cho-Eun Lee , Su-Jin Jung , Min-Hee Choi , Yang Xu , Dong-Suk Shin , Kwan-Heum Lee , Hoi-Sung Chung
IPC分类号： H01L27/088 , H01L27/11 , H01L29/66 , H01L29/78 , H01L23/485 , H01L21/8234 , H01L29/417 , H01L23/528 , H01L29/08 , H01L29/161 , H01L29/45 , H01L27/092 , H01L29/165
摘要： A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.
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公开(公告)号：US20190244963A1
公开(公告)日：2019-08-08
申请号：US16388347
申请日：2019-04-18
发明人： Jin-Bum Kim , Myung-Gil Kang , Kang-Hun Moon , Cho-Eun Lee , Su-Jin Jung , Min-Hee Choi , Yang Xu , Dong-Suk Shin , Kwan-Heum Lee , Hoi-Sung Chung
IPC分类号： H01L27/11 , H01L29/66 , H01L29/161 , H01L29/78 , H01L29/08 , H01L23/528 , H01L29/417 , H01L21/8234 , H01L27/088 , H01L23/485 , H01L29/45
CPC分类号： H01L27/1104 , H01L21/823431 , H01L23/485 , H01L23/5283 , H01L27/0886 , H01L27/0924 , H01L29/0847 , H01L29/161 , H01L29/165 , H01L29/41791 , H01L29/456 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.
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