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1.发明授权Page buffer, memory device comprising page buffer, and related method of operation 有权页面缓冲器，包括页面缓冲器的存储器件以及相关的操作方法公开(公告)号：US09007850B2
公开(公告)日：2015-04-14
申请号：US13718105
申请日：2012-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hyun Joo , Il-Han Park , Ki-Hwan Song
CPC classification number: G11C11/24 , G11C16/02 , G11C16/10 , G11C2216/14
Abstract: A page buffer comprises a static latch configured to store data received from an external device, and a dynamic latch configured to receive the data stored in the static latch through a floating node, the dynamic latch comprising a storage capacitor, a write transistor configured to write the data of the floating node to the storage capacitor, and a read transistor configured to read the data of the storage capacitor, and the write transistor and the read transistor sharing the floating node.
Abstract translation: 页面缓冲器包括被配置为存储从外部设备接收的数据的静态锁存器和配置成通过浮动节点接收存储在静态锁存器中的数据的动态锁存器，该动态锁存器包括存储电容器，写入晶体管被配置为写入 浮动节点到存储电容器的数据，以及被配置为读取存储电容器的数据的读取晶体管，以及共享浮动节点的写入晶体管和读取晶体管。
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2.发明申请PAGE BUFFER, MEMORY DEVICE COMPRISING PAGE BUFFER, AND RELATED METHOD OF OPERATION 有权页面缓冲器，包含页面缓冲器的存储器件以及相关的操作方法公开(公告)号：US20130250678A1
公开(公告)日：2013-09-26
申请号：US13718105
申请日：2012-12-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Hyun Joo , Il-Han Park , Ki-Hwan Song
CPC classification number: G11C11/24 , G11C16/02 , G11C16/10 , G11C2216/14
Abstract: A page buffer comprises a static latch configured to store data received from an external device, and a dynamic latch configured to receive the data stored in the static latch through a floating node, the dynamic latch comprising a storage capacitor, a write transistor configured to write the data of the floating node to the storage capacitor, and a read transistor configured to read the data of the storage capacitor, and the write transistor and the read transistor sharing the floating node.
Abstract translation: 页面缓冲器包括被配置为存储从外部设备接收的数据的静态锁存器和配置成通过浮动节点接收存储在静态锁存器中的数据的动态锁存器，该动态锁存器包括存储电容器，写入晶体管被配置为写入 浮动节点到存储电容器的数据，以及被配置为读取存储电容器的数据的读取晶体管，以及共享浮动节点的写入晶体管和读取晶体管。
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