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    OVERLAY MEASUREMENT DEVICE AND METHOD AND METHOD OF FORMING OVERLAY PATTERN
    2.
    发明申请
    OVERLAY MEASUREMENT DEVICE AND METHOD AND METHOD OF FORMING OVERLAY PATTERN 审中-公开
    覆盖测量装置及其形成覆盖图案的方法和方法

    公开(公告)号：US20160025484A1

    公开(公告)日：2016-01-28

    申请号：US14638702

    申请日：2015-03-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae-Sun KIM ,  Jae-Kyung SEO ,  Kwang-Sub YOON ,  Bi-Zheng WANG ,  Ki-Man LEE ,  Bum-Joon YOUN

    IPC: G01B11/27

    CPC classification number: G03F7/70633

    Abstract: Example embodiments relate to an overlay measurement device and method of forming an overlay pattern. The overlay measurement device includes a tray part with a substrate having a first region and a second region, a measurement part which measures an overlay of a first or second element, and a processor part which receives data measured by the measurement part and corrects the position of the first or second element, wherein the substrate comprises a first layer comprising the first overlay marks, a second layer comprising the second overlay marks, which intersects the first direction, in the second region and not comprising overlay marks which are used to measure the overlay of the second element; and the photoresist pattern which is formed on the first and second layers and overlaps the first and second overlay marks.

    Abstract translation: 示例性实施例涉及覆盖测量设备和形成覆盖图案的方法。 覆盖测量装置包括具有第一区域和第二区域的基板的托盘部分，测量第一或第二元件的覆盖层的测量部分和接收由测量部件测量的数据并且校正位置的处理器部件 的第一或第二元件，其中所述基底包括包含所述第一覆盖标记的第一层，在所述第二区域中包括与所述第一方向相交的所述第二覆盖标记的第二层，并且不包括用于测量所述第一覆盖标记的覆盖标记 覆盖第二个元素; 以及形成在第一层和第二层上并与第一和第二覆盖标记重叠的光致抗蚀剂图案。

    METHOD FOR OUTPUTTING AUDIO AND ELECTRONIC DEVICE FOR THE SAME
    3.
    发明申请
    METHOD FOR OUTPUTTING AUDIO AND ELECTRONIC DEVICE FOR THE SAME 有权
    用于输出音频和电子设备的方法

    公开(公告)号：US20160255398A1

    公开(公告)日：2016-09-01

    申请号：US15056204

    申请日：2016-02-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-Man LEE ,  Mi-Sun KIM ,  Sang-Hun KIM ,  Hyun-Joong KIM ,  Mi-Ra SEO ,  Woo-Cheol JUNG ,  Yong-Gu LEE

    IPC: H04N21/439 ,  H04N21/61 ,  H04N21/4363 ,  H04N21/41 ,  H04N21/4788

    CPC classification number: H04N21/4394 ,  G06F3/16 ,  H04L65/00 ,  H04L65/1083 ,  H04L65/1089 ,  H04L65/4015 ,  H04N21/4126 ,  H04N21/43637 ,  H04N21/4788 ,  H04N21/6131 ,  H04N21/8106

    Abstract: A method for communicating data by an electronic device is provided. The method includes transmitting a signal including audio/video (A/V) data to a first external electronic device through a first communication module, while connected with the first external electronic device, generating data or a signal unrelated to the A/V data or receiving the data or signal unrelated to the A/V data from an external electronic device other than the first external electronic device, and providing an audio or a video through a display or an embedded sound device based on at least a portion of the data or the signal unrelated to the A/V data or transmitting the at least a portion of the data or the signal unrelated to the A/V data to a second external electronic device through a second communication module.

    Abstract translation: 提供了一种通过电子设备传送数据的方法。 该方法包括：在与第一外部电子设备连接的同时，通过第一通信模块将包括音频/视频（A / V）数据的信号发送到第一外部电子设备，生成与A / V数据无关的数据或信号， 从除了第一外部电子设备之外的外部电子设备接收与A / V数据无关的数据或信号，以及基于数据的至少一部分，通过显示器或嵌入式声音设备提供音频或视频，或 与A / V数据无关的信号或通过第二通信模块将与A / V数据无关的信号的至少一部分或第二外部电子设备发送到第二外部电子设备。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND ELECTRONIC DEVICES
    6.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND ELECTRONIC DEVICES 有权
    制造半导体器件和电子器件的方法

    公开(公告)号：US20150187910A1

    公开(公告)日：2015-07-02

    申请号：US14505662

    申请日：2014-10-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae-Sun KIM ,  Jae-Kyung SEO ,  Ji-Ho KIM ,  Kwang-Sub YOON ,  Bum-Joon YOUN ,  Ki-Man LEE

    IPC: H01L29/66 ,  H01L21/268 ,  H01L21/266 ,  H01L21/027 ,  H01L21/311

    CPC classification number: H01L29/66636 ,  H01L21/0276 ,  H01L21/823418 ,  H01L21/823437 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7834

    Abstract: In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

    Abstract translation: 在制造半导体器件的方法中，在衬底上形成隔离层图案，以限定由隔离层图案覆盖的场区域和未被隔离层图案覆盖并从隔离层突出的第一和第二有源区域 模式。 第一抗反射层形成在隔离层图案上。 在基板的第一和第二有源区域和第一抗反射层上形成第一光致抗蚀剂层。 部分蚀刻第一光致抗蚀剂层以形成覆盖第一有源区的第一光致抗蚀剂图案。 将杂质注入到第二有源区中以形成第一杂质区。

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