公开(公告)号：US10818522B2

公开(公告)日：2020-10-27

申请号：US15978303

申请日：2018-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine Park ,  Byung-Kwon Cho ,  Yong-Jhin Cho ,  Yong-Sun Ko ,  Yeon-Jin Gil ,  Kwang-Wook Lee

IPC: H01L21/302 ,  H01L21/67 ,  H01L21/66

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

公开(公告)号：US09136135B2

公开(公告)日：2015-09-15

申请号：US13944087

申请日：2013-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jik Baek ,  Ji-Hoon Cha ,  Bo-Un Yoon ,  Kwang-Wook Lee ,  Jeong-Nam Han

IPC: H01L21/306 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/30604 ,  H01L21/30608 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/7833 ,  H01L29/7848

Abstract: A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, and etching sides of the gate pattern using a first wet-etching process to form a first recess. The first wet-etching process includes using an etchant containing a first chemical substance including a hydroxyl functional group (—OH) and a second chemical substance capable of oxidizing the substrate. The concentration of the second chemical substance is 1.5 times or less the concentration of the first chemical substance.

Abstract translation: 制造半导体器件的方法包括在衬底上形成栅极图案，并且使用第一湿蚀刻工艺蚀刻栅极图案的侧面以形成第一凹部。 第一湿蚀刻工艺包括使用含有包含羟基官能团（-OH）的第一化学物质和能够氧化底物的第二化学物质的蚀刻剂。 第二化学物质的浓度为第一化学物质浓度的1.5倍以下。