公开(公告)号：US20240282604A1

公开(公告)日：2024-08-22

申请号：US18439813

申请日：2024-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunwoo PARK ,  Minwoo RHEE ,  Sujie KANG ,  Bumki MOON ,  Seungdon LEE ,  Hyunjin LEE ,  Kyeongbin LIM

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/6715 ,  H01L21/67288 ,  H01L22/20

Abstract: A method of manufacturing a semiconductor device includes: performing a first semiconductor process on a semiconductor wafer including a front side and a back side opposing the front side; loading the semiconductor wafer into a semiconductor processing apparatus including a support, a spraying apparatus, and a warpage measuring apparatus, wherein the semiconductor wafer is supported by the support, wherein the spraying apparatus is disposed below the semiconductor wafer, and the warpage measuring apparatus is an apparatus configured to measure warpage of the semiconductor wafer; forming a warpage compensation pattern on the back side of the semiconductor wafer using the spraying apparatus until a warpage measurement value of the semiconductor wafer is within a predetermined range, while measuring warpage of the semiconductor wafer using the warpage measuring apparatus; and unloading, from the semiconductor processing apparatus, the semiconductor wafer on which the warpage compensation pattern is formed.

公开(公告)号：US20210005475A1

公开(公告)日：2021-01-07

申请号：US16747783

申请日：2020-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeongbin LIM ,  Hyeonjun Yun ,  Gwanghee Jo ,  Jewon Lee ,  Minsoo Han ,  Junhyung Kim ,  Seungdae Seok

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/20 ,  H01L23/00

Abstract: In a wafer to wafer bonding method, a first wafer is vacuum suctions on a first surface of a lower stage and a second wafer is vacuum suctioned on a second surface of an upper stage. Pressure is applied to a middle portion of the first wafer by a lower push rod and pressure is applied to a middle portion of the second wafer by an upper push rod. Bonding of the first and second wafers propagates radially outwards. A bonding propagation position of the first and second wafers is detected. A ratio of protruding lengths of the lower push rod and the upper push rod is changed according to the bonding propagation position.