公开(公告)号：US20170250339A1

公开(公告)日：2017-08-31

申请号：US15332042

申请日：2016-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Rie SIM ,  Dae-Hwan KANG ,  Gwan-Hyeob KOH

IPC: H01L45/00 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L45/1233 ,  H01L27/2427 ,  H01L27/2481 ,  H01L43/08 ,  H01L43/10 ,  H01L45/04 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1675

Abstract: A variable resistance memory device includes first memory cells and second memory cells. The first memory cells are between first and second conductive lines, and at areas at which the first and second conductive lines overlap. The second memory cells are between the second and third conductive lines, and at areas at which the second and third conductive lines overlap. Each first memory cell includes a first variable resistance pattern and a first selection pattern. Each second memory cell includes a second variable resistance pattern and a second selection pattern. At least one of the second memory cells is shifted from a closest one of the first memory cells.

公开(公告)号：US20200234736A1

公开(公告)日：2020-07-23

申请号：US16560127

申请日：2019-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Rie SIM ,  Taehui NA

IPC: G11C5/06 ,  H01L27/24 ,  H01L45/00 ,  G11C5/02

Abstract: A variable resistance memory device includes memory cell stacks arranged in a first direction, the memory cell stacks including a first memory cell stack and a second memory cell stack. Each of the memory cell stacks includes a plurality of word lines, each word line of the plurality of word lines extending in a second direction intersecting the first direction and arranged in a third direction intersecting the first and second directions, and a memory cell connected to each of the plurality of word lines. Each of the memory cells includes a switching element and a variable resistance element. Each of the plurality of word lines of the first memory cell stack have a first thickness, in the first direction, of first word lines of the first memory cell stack is less than a second thickness, in the first direction, of each of the plurality of word lines of the second memory cell stack.

公开(公告)号：US20180342672A1

公开(公告)日：2018-11-29

申请号：US16055512

申请日：2018-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Rie SIM ,  Dae-Hwan Kang ,  Gwan-Hyeob Koh

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L45/1233 ,  H01L27/2427 ,  H01L27/2481 ,  H01L43/08 ,  H01L43/10 ,  H01L45/04 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1675

Abstract: A variable resistance memory device includes first memory cells and second memory cells. The first memory cells are between first and second conductive lines, and at areas at which the first and second conductive lines overlap. The second memory cells are between the second and third conductive lines, and at areas at which the second and third conductive lines overlap. Each first memory cell includes a first variable resistance pattern and a first selection pattern. Each second memory cell includes a second variable resistance pattern and a second selection pattern. At least one of the second memory cells is shifted from a closest one of the first memory cells.