公开(公告)号：US20210146476A1

公开(公告)日：2021-05-20

申请号：US16906410

申请日：2020-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul KWON ,  Changhyun KIM ,  Byoungho LEE ,  Jangwoon SUNG ,  Junhyeok JANG ,  Chulsoo CHOI ,  Manhee HAN

IPC: B23K26/06 ,  B23K26/073

Abstract: A stealth dicing apparatus may include a laser light source, and a linearly focusing lens configured to linearly focus a beam output from the laser light source. The linearly focusing lens includes a horizontal surface, and an inclined surface forming an inclination angle with the horizontal surface. The inclination angle satisfies an expression 34.97R2−146.6R+162.5

公开(公告)号：US20250022760A1

公开(公告)日：2025-01-16

申请号：US18635180

申请日：2024-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghyun ROH ,  Honggyun KIM ,  Manhee HAN ,  Jaeyoung HONG

IPC: H01L21/66

Abstract: A semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite to the first surface. The semiconductor substrate includes a circuit pattern region and a peripheral region surrounding the circuit pattern region, an activation layer on the second surface of the semiconductor substrate and having a plurality of circuit patterns in the circuit pattern region, and at least one scattering detection pattern in the peripheral region and having a plurality of circuit cells that generate leakage current based on a scattered beam or heat of a laser.

公开(公告)号：US20240321766A1

公开(公告)日：2024-09-26

申请号：US18611841

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Manhee HAN ,  Jimin KIM

IPC: H01L23/544 ,  H01L21/78

CPC classification number: H01L23/544 ,  H01L21/78 ,  H01L2223/5446

Abstract: Provided is a semiconductor chip including a substrate, an active layer on the substrate, and a coated layer on side surfaces of the active layer and configured to surround the active layer, wherein an average roughness of the side surfaces of the active layer is greater than an average roughness of an upper surface of the active layer, and at least a portion of the substrate contacts the coated layer.

公开(公告)号：US20230339071A1

公开(公告)日：2023-10-26

申请号：US17977018

申请日：2022-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghyun ROH ,  Jongguw KIM ,  Wangsun LIM ,  Manhee HAN ,  Jaeyoung HONG

IPC: B24B53/00 ,  B24B53/017 ,  H01L21/304

CPC classification number: B24B53/005 ,  B24B53/017 ,  H01L21/304

Abstract: A grinding apparatus and a method for manufacturing a semiconductor device using the same are provided. A griding apparatus includes a chuck unit configured to receive a substrate, a grinding unit on a part of the chuck unit and configured to grind the substrate, and a dressing unit under a part of the grinding unit adjacent to the chuck unit and including a dressing board configured to dress the grinding unit and magnets under the dressing board.