公开(公告)号：US20170213842A1

公开(公告)日：2017-07-27

申请号：US15067855

申请日：2016-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-chul PARK ,  Bio KIM ,  Young-Gu KIM ,  Jaehoon JEONG ,  Eunsuk CHO ,  Hyejin CHO ,  Jong In YUN

IPC: H01L27/115 ,  H01L29/06 ,  H01L21/02 ,  H01L29/10 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/02238 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/40117

Abstract: A semiconductor memory device includes a substrate, a stack disposed on the substrate, a vertical channel structure penetrating the stack, and a fixed charge layer disposed in the vertical channel structure. The stack includes insulating patterns and gate electrodes alternately and repeatedly disposed on one another. The vertical channel structure includes a data storing pattern.

公开(公告)号：US20130168774A1

公开(公告)日：2013-07-04

申请号：US13727995

申请日：2012-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namho JEON ,  Min-chul PARK ,  Seunguk HAN

IPC: H01L27/088

CPC classification number: H01L27/088 ,  G11C11/4085 ,  G11C11/4087 ,  H01L27/0207 ,  H01L27/10897

Abstract: A semiconductor device may include a substrate including an active region defined by a device isolation layer, gate electrodes extending in a first direction on the substrate and spaced apart from each other, gate tabs extending in a second direction different from the first direction and connecting adjacent gate electrodes to each other, the gate tabs spaced apart from each other, and a first contact plug disposed on the active region under a space confined by the adjacent gate electrodes and adjacent gate tabs. The space may include a first region having a first width and a second region having a second width smaller than the first width, the first contact plug may be disposed on the active region under the second region.

Abstract translation: 半导体器件可以包括：衬底，其包括由器件隔离层限定的有源区，沿着第一方向在衬底上延伸并且彼此间隔开的栅电极，栅极突片沿与第一方向不同的第二方向延伸并连接相邻 栅极彼此间隔开，栅极突片彼此间隔开;以及第一接触插塞，其设置在由相邻的栅电极和相邻的栅极接线片限定的空间之下的有源区域上。 空间可以包括具有第一宽度的第一区域和具有小于第一宽度的第二宽度的第二区域，第一接触插塞可以设置在第二区域下方的有源区域上。