公开(公告)号：US20250012736A1

公开(公告)日：2025-01-09

申请号：US18662244

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohun Kim ,  Mincheol Kwak ,  Junseong Yoon ,  Jeongjin Lee ,  Seungyoon Lee ,  Chan Hwang

IPC: G01N21/956 ,  G01N21/95 ,  G06T7/00

Abstract: A method of optimizing an overlay measurement condition includes measuring, for each overlay measurement condition of multiple overlay measurement conditions, an overlay at multiple positions on a substrate; calculating, for each of the multiple overlay measurement conditions, key parameter indexes (KPIs) based on the measured overlay; converting, for each of the multiple overlay measurement conditions, the KPIs into key parameter function (KPF) values based on a KPF, where each of the KPFs has a same dimensional representation; integrating, for each of the multiple overlay measurement conditions, the KPF values to generate an integrated KPF value; and selecting an optimized overlay measurement condition from among the multiple overlay measurement conditions based on the integrated KPF values associated with each of the multiple overlay measurement conditions.

公开(公告)号：US11380552B2

公开(公告)日：2022-07-05

申请号：US16858591

申请日：2020-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Yoon ,  Mincheol Kwak ,  Joonghee Kim ,  Jihee Kim ,  Yeongshin Park ,  Jungheun Hwang

IPC: H01L21/308 ,  H01L27/108

Abstract: In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure including a plurality of hard mask layers stacked on each other is formed. In the first area and the second area, a protective layer covering the hard mask structure is formed. On the protective layer, a photoresist layer is formed. A photoresist pattern is formed by exposing and developing the photoresist layer in the first area by using the step difference in the second area as an alignment key.