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    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20210399008A1

    公开(公告)日：2021-12-23

    申请号：US17154159

    申请日：2021-01-21

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Ju-Young LIM ,  Jongsoo KIM ,  Jesuk MOON ,  Dongwoo KIM ,  Sunil SHIM ,  Wonseok CHO

    IPC分类号： H01L27/11582 ,  H01L23/522 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11573 ,  H01L27/11526

    摘要： A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region, an electrode structure including electrodes vertically stacked on the substrate, the electrodes including pad portions on the connection region, respectively, and the pad portions of the electrodes being stacked in a staircase structure, first vertical structures penetrating the electrode structure on the cell array region, and second vertical structures penetrating the electrode structure on the connection region, each of the second vertical structures including first parts spaced apart from each other in a first direction, and at least one second part connecting the first parts to each other, the at least one second part penetrating sidewalls of the pad portions, respectively.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210217860A1

    公开(公告)日：2021-07-15

    申请号：US17141513

    申请日：2021-01-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Ryong HA ,  Dongwoo KIM ,  Gyeom KIM ,  Yong Seung KIM ,  Pankwi PARK ,  Seung Hun LEE

    IPC分类号： H01L29/417 ,  H01L29/10 ,  H01L29/423

    摘要： A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.

    METHOD AND APPARATUS FOR OPERATING FUNCTIONS OF PORTABLE TERMINAL HAVING BENDED DISPLAY
    4.
    发明申请
    METHOD AND APPARATUS FOR OPERATING FUNCTIONS OF PORTABLE TERMINAL HAVING BENDED DISPLAY 审中-公开
    用于操作具有弯曲显示器的便携式终端功能的方法和装置

    公开(公告)号：US20150242006A1

    公开(公告)日：2015-08-27

    申请号：US14709925

    申请日：2015-05-12

    申请人： Samsung Electronics Co., Ltd.

    发明人： Youngri KIM ,  Ilhwan KIM ,  Dongwoo KIM ,  Jaehwan KIM ,  Jiyeon YOO ,  Juyoun LEE ,  Sangok CHA ,  Siejoon CHO

    IPC分类号： G06F3/041 ,  G06F3/0488 ,  G06F3/0485 ,  G06F1/16 ,  G06F3/0482

    CPC分类号： G06F3/041 ,  G06F1/1626 ,  G06F1/1637 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/0488 ,  G06F2203/04102 ,  G06F2203/04803

    摘要： A portable terminal having a bended display divided into a main region of a front surface and a sub-region of a side of the portable terminal and operating functions of the portable terminal in connection with the main region and the sub-region, and a method of operating the same are provided. The method of operating functions of a portable terminal having a bended display, includes receiving an input of an event, determining a type of the input event, outputting event information, according to an internal event input based on the bended display, through at least one of a main region and a sub-region of the bended display when the input event is the internal event, and outputting event information, according to an external event input from an outside source, through the sub-region of the bended display when the input event is the external event.

    摘要翻译： 一种便携式终端，其具有被分为便携式终端的正面和副区域的主区域和与主区域和子区域相关的便携式终端的操作功能的弯曲显示器，以及方法 提供了这些操作。 具有弯曲显示器的便携式终端的操作功能的方法包括：接收事件的输入，根据基于弯曲显示的内部事件输入，确定输入事件的类型，输出事件信息，通过至少一个 当所述输入事件是所述内部事件时，所述弯曲显示器的主区域和子区域是根据从外部源输入的外部事件通过所述弯曲显示器的子区域输出的事件信息 事件是外部事件。

    SEMICONDUCTOR DEVICE
    6.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230326985A1

    公开(公告)日：2023-10-12

    申请号：US18201308

    申请日：2023-05-24

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Ryong HA ,  Dongwoo KIM ,  Gyeom KIM ,  Yong Seung KIM ,  Pankwi PARK ,  Seung Hun LEE

    IPC分类号： H01L29/423 ,  H01L29/417 ,  H01L29/10

    CPC分类号： H01L29/41758 ,  H01L29/1033 ,  H01L29/42356

    摘要： A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.

    PEN INPUT DEVICE WITH BATTERY AND OPERATING METHOD THEREOF
    7.
    发明申请
    PEN INPUT DEVICE WITH BATTERY AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20220197410A1

    公开(公告)日：2022-06-23

    申请号：US16978915

    申请日：2020-08-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Dongwoo KIM ,  Minsoo KIM ,  Siho KIM ,  Jiwoo LEE

    IPC分类号： G06F3/0354 ,  G06F3/038 ,  H05K5/00 ,  H05K1/18 ,  H02J7/00

    摘要： A pen input device is provided, including a housing including a front opening and a rear opening; a pen input generator including a pen tip disposed in the front opening, the pen input generator generating a position signal and a pen pressure signal of the pen input device; a battery; a PCB; a support on which at least a part of the pen input generator, the battery, and the PCB are disposed; a conductive member electrically connecting the PCB and the battery; a buffer disposed in the rear opening; and a polymer that fills in an inner space of the housing. The support includes a support plate extended in a direction toward the rear opening from the front opening of the housing, and a first partition, a second partition, and a third partition, which protrude from the support plate and are sequentially spaced.

    SEMICONDUCTOR DEVICES
    8.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220069134A1

    公开(公告)日：2022-03-03

    申请号：US17206229

    申请日：2021-03-19

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Dongwoo KIM ,  Jinbum KIM ,  Gyeom KIM ,  Dohee KIM ,  Seunghun LEE

    IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/161 ,  H01L29/423 ,  H01L29/417 ,  H01L21/02 ,  H01L29/66

    摘要： A semiconductor device including an active region extending in a first direction on a substrate; channel layers vertically spaced apart on the active region; a gate structure extending in a second direction and intersecting the active region, the gate structure surrounding the channel layers; a source/drain region on the active region in contact with the channel layers; and a contact plug connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer on side surfaces of the channel layers and including a first impurity; a second epitaxial layer on the first epitaxial layer and including the first impurity and a second impurity; and a third epitaxial layer on the second epitaxial layer and including the first impurity, and in a horizontal sectional view, the second epitaxial layer includes a peripheral portion having a thickness in the first direction that increases along the second direction.