公开(公告)号：US20240421068A1

公开(公告)日：2024-12-19

申请号：US18738100

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoungsoo KIM ,  Minyoung KIM

IPC: H01L23/522 ,  H01L27/02 ,  H01L27/06

Abstract: A semiconductor device including: a device layer on a substrate; an interconnection layer disposed on the device layer, wherein the interconnection layer includes conductive interconnections forming a plurality of layers; and first and second capacitor structures disposed inside the interconnection layer. Each of the first and second capacitor structures includes: electrode layers spaced apart from each other in a vertical direction and forming three or more layers; dielectric layers between the electrode layers; conductive vias respectively connected to one of the electrode layers and extending vertically; a first connection terminal electrically connected to a lowermost electrode layer; and a second connection terminal electrically connected to at least one of the electrode layers, wherein the first capacitor structure and the second capacitor structure include the same number of electrode layers, and wherein a first capacitance of the first capacitor structure is different from a second capacitance of the second capacitor structure.

公开(公告)号：US20230060486A1

公开(公告)日：2023-03-02

申请号：US17748152

申请日：2022-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyun LEE ,  Myoungsoo KIM ,  Sangchul HAN ,  Daeman SEO

IPC: H05H1/46

Abstract: A plasma generator includes a coaxial tube assembly, a radio frequency (RF) electrode, and a feed including an inner circumferential surface that defines a first and second recesses at opposite, first and second ends of the feed. A first protrusion of the coaxial tube assembly is coupled to the first recess of the feed. A second protrusion of the coaxial tube assembly is coupled to the second recess of the feed. The feed includes first and second inner surfaces that define first and second insertion grooves in the inner circumferential surface at the first and second ends of the feed, respectively. First and second coil springs are at least partially within the first and second insertion grooves, respectively. The coaxial tube assembly, the RF electrode, and the feed provide an RF power transmission path based on the feed being coupled between the coaxial tube assembly and the RF electrode.

公开(公告)号：US20230260901A1

公开(公告)日：2023-08-17

申请号：US17942411

申请日：2022-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsoo KIM

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01L23/5223 ,  H01L23/5283 ,  H01L23/53214 ,  H01L28/24 ,  H01L28/60

Abstract: An integrated circuit is provided. The integrated circuit includes a substrate, one or more active devise such as one or more transistors arranged on the substrate, a plurality of interlayer dielectrics arranged on the substrate, a first metallization pattern arranged on the plurality of interlayer dielectrics, a first lower electrode arranged on the first metallization pattern, a first dielectric layer arranged on the first lower electrode, and a first upper electrode arranged on the first dielectric layer, wherein a thickness of the first metallization pattern in a first direction perpendicular to the substrate is not uniform, e.g. is variable, e.g. is not planar.

公开(公告)号：US20210074953A1

公开(公告)日：2021-03-11

申请号：US16877303

申请日：2020-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsoo KIM

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: A light emitting device includes a substrate; a circuit region including a circuit device on the substrate; an insulating layer on the circuit region; a first light emitting region connecting portion, a second light emitting region connecting portion, and a third light emitting region connecting portion, in the insulating layer; and a light emitting portion including a first light emitting region on the first light emitting region connecting portion, a second light emitting region on the second light emitting region connecting portion, and a third light emitting region on the third light emitting region connecting portion, the first light emitting region connecting portion includes first light reflective layers including a first lower light reflective layer, a first intermediate light reflective layer on the first lower light reflective layer, and a first upper light reflective layer on the first intermediate light reflective layer, and at least one first via plug connected to the first light emitting region, the second light emitting region connecting portion includes second light reflective layers including a second lower light reflective layer, and a second upper light reflective layer on the second lower light reflective layer, and at least one second via plug connected to the second light emitting region, and the third light emitting region connecting portion includes a third light reflective layer, and a third via plug connected to the third light emitting region.

公开(公告)号：US20210050387A1

公开(公告)日：2021-02-18

申请号：US16782260

申请日：2020-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoungsoo KIM

IPC: H01L27/32 ,  H01L51/52

Abstract: An OLED including a substrate; a circuit region; reflective metal layers on the circuit region and including first to third reflective metal layers spaced apart from each other; an insulating layer including first to third insulating regions covering upper surfaces of the reflective metal layers and having a first to third thicknesses that are different from one another; first to third via plugs penetrating through the insulating layer to contact the reflective metal layers, first electrodes in contact with the via plugs, and covering a portion of an upper surface of the insulating layer; an organic light emitting layer on the first electrodes; and a second electrode on the organic light emitting layer, wherein the first to third via plugs include tungsten.

公开(公告)号：US20180012970A1

公开(公告)日：2018-01-11

申请号：US15626573

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsoo KIM

IPC: H01L29/423 ,  H01L29/788 ,  H01L29/06 ,  H01L29/66 ,  H01L29/08 ,  H01L23/535 ,  H01L29/49 ,  H01L29/10 ,  H01L21/3213

CPC classification number: H01L29/42332 ,  H01L21/32139 ,  H01L23/535 ,  H01L29/0611 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/4933 ,  H01L29/4991 ,  H01L29/6656 ,  H01L29/66825 ,  H01L29/788

Abstract: The semiconductor device including a device isolation layer disposed in a substrate and defining an active region, a first conductive pattern on the active region, an impurity region in the active region on a side of the first conductive pattern, a second conductive pattern on the active region between the impurity region and the first conductive pattern, a first spacer between the first conductive pattern and the second conductive pattern, and a contact plug disposed on and electrically connected to the first conductive pattern may be provided. The second conductive pattern may have a width less than a width of the contact plug.

公开(公告)号：US20200303268A1

公开(公告)日：2020-09-24

申请号：US16579935

申请日：2019-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoungsoo KIM

IPC: H01L21/66 ,  H01L23/00 ,  H01L23/528 ,  H01L23/522 ,  G01R31/26

Abstract: A semiconductor device including a substrate including a bonding pad region and an edge region; and a residual test pattern on the edge region of the substrate, wherein a sidewall of the residual test pattern is aligned with a sidewall of the substrate.