公开(公告)号：US20140197038A1

公开(公告)日：2014-07-17

申请号：US14155776

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-Beom PARK ,  Yun-Deok KANG ,  Ki-Hyeon KIM ,  Youn-Joung CHO ,  Jung-Sik CHOI

IPC: C25D3/38

CPC classification number: C25D3/38 ,  C25D5/04 ,  C25D5/08 ,  C25D17/001 ,  C25D17/06 ,  C25D21/14

Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract translation: 电镀液包括水溶性铜盐，硫化物离子和氯离子的水性电解质溶液，包含具有硫（S）的有机材料，促进铜（Cu）还原的促进剂的促进剂，包含聚醚化合物的抑制剂，抑制剂 选择性地抑制铜还原，以及包含在电解质水溶液中溶解成正离子的具有氮的水溶性聚合物的整平剂。

公开(公告)号：US20170004971A1

公开(公告)日：2017-01-05

申请号：US15058183

申请日：2016-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choong-Yeol KIM ,  Myung-Beom PARK ,  Han-Gyul KO ,  Hwi-Hyeon OH ,  Hye-Young JIN

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/2658 ,  H01J37/00 ,  H01J37/08 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823814 ,  H01L29/0623 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/66575

Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Abstract translation: 在制造半导体器件的方法中，制备半导体衬底。 含硼的离子通过使硼烷类化合物和含卤素源彼此反应而产生。 基于硼烷的化合物包括质量数为11（11B）的硼。 将含硼离子注入到半导体衬底中以形成杂质区。