公开(公告)号：US20210091085A1

公开(公告)日：2021-03-25

申请号：US16850223

申请日：2020-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmi YOON ,  Donghyun IM ,  Jooyub KIM ,  Juhyung WE ,  Namhoon LEE ,  Chunhyung CHUNG

IPC: H01L27/108 ,  H01L29/06 ,  H01L21/762

Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.

公开(公告)号：US20220189963A1

公开(公告)日：2022-06-16

申请号：US17685794

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmi YOON ,  Donghyun IM ,  Jooyub KIM ,  Juhyung WE ,  Namhoon LEE ,  Chunhyung CHUNG

IPC: H01L27/108 ,  H01L21/762 ,  H01L29/06

Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.

公开(公告)号：US20240320814A1

公开(公告)日：2024-09-26

申请号：US18432450

申请日：2024-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongju LEE ,  Sangmin JUNG ,  Seunghwan YOO ,  Raehong YOUN ,  Namhoon LEE

IPC: G06T7/00 ,  G06T3/403 ,  G06T5/40 ,  G06T5/92 ,  G06T7/13 ,  G06T7/136 ,  G06T7/60 ,  H01L21/67

CPC classification number: G06T7/0004 ,  G06T3/403 ,  G06T5/40 ,  G06T5/92 ,  G06T7/13 ,  G06T7/136 ,  G06T7/60 ,  H01L21/67288 ,  G06T2207/20036 ,  G06T2207/20132 ,  G06T2207/30148

Abstract: A defect inspection or reduction apparatus includes a chamber moving a substrate and having an inner space therein, a laser oscillation structure irradiating a laser beam to a processing area of the substrate, a mask positioned in the laser oscillation structure and processing the laser beam, a beam profiler obtaining a beam image for the laser beam passing through the mask, and a damage detector detecting a defect area of the mask and the laser beam from the beam image. The damage detector includes an image pre-processing department performing a pre-processing on the beam image that is obtained from the beam profiler, an image extraction department extracting a defect area of the beam image on which the pre-processing is performed, and an image detector detecting a defect of the beam image based on the defect area.