公开(公告)号：US20240194273A1

公开(公告)日：2024-06-13

申请号：US18239480

申请日：2023-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chiweon Yoon ,  Chihyun Kim ,  Philkyu Kang ,  Junehong Park ,  Jayang Yoon ,  Hyeongdo Choi

IPC: G11C16/30 ,  G06F1/20 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/30 ,  G06F1/206 ,  G11C16/0483 ,  G11C16/08

Abstract: A nonvolatile memory device comprising a charge pump circuit with pump units connected in series that receives an external voltage for charge pumping and outputs a pump voltage in stages according to stage control signals, a switching circuit that controls the charge pump circuit to output pumping voltages in response to switch control signals, a stage controller that outputs the stage control signals and the switch control signals based on a temperature code, and a digital temperature sensor that generates the temperature code.