公开(公告)号：US12266419B2

公开(公告)日：2025-04-01

申请号：US17944414

申请日：2022-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dojeon Lee ,  Junehong Park ,  Kichang Jang

IPC: G11C7/04 ,  G11C5/06 ,  G11C5/14 ,  G11C7/10

Abstract: A semiconductor device includes a first voltage generating circuit configured to output a first voltage based on temperature; an analog-to-digital converter configured to convert the first voltage into a temperature code; a code conversion logic configured to output an offset code and a level code of a temperature section which the temperature belongs among temperature sections based on the temperature code; an offset voltage generating circuit configured to output an offset voltage based on the offset code; a second voltage generating circuit configured to output a second voltage having a constant value within a temperature section based on the level code; and a temperature compensation voltage generating circuit configured to receive the first voltage, the second voltage, the offset voltage, and a feedback voltage and output a temperature compensation voltage, the feedback voltage based on the first voltage, the second voltage, and the offset voltage.

公开(公告)号：US20240242765A1

公开(公告)日：2024-07-18

申请号：US18382325

申请日：2023-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jayang Yoon ,  Chihyun Kim ,  Sangsoo Park ,  Junehong Park ,  Chiweon Yoon ,  Hyeongdo Choi

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/30

CPC classification number: G11C16/102 ,  G11C16/08 ,  G11C16/30

Abstract: A non-volatile memory device includes a memory cell array including memory cells coupled to word lines, a boost circuit that receives an external power supply voltage and generate a boosted voltage based on the external power supply voltage, a regulator that generates a regulated voltage based on the external power supply voltage, and a control logic that controls word line voltages provided to the word lines. The control logic performs plural program loops in a program operation for the memory cell array. The control logic provides an adjacent word line voltage to an adjacent word line that is adjacent to a selected word line. In a first section of the program loops, the control logic provides the regulated voltage as the adjacent word line voltage, and in a second section of the program loops, the control logic provides the boosted voltage as the adjacent word line voltage.

公开(公告)号：US20240194273A1

公开(公告)日：2024-06-13

申请号：US18239480

申请日：2023-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chiweon Yoon ,  Chihyun Kim ,  Philkyu Kang ,  Junehong Park ,  Jayang Yoon ,  Hyeongdo Choi

IPC: G11C16/30 ,  G06F1/20 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/30 ,  G06F1/206 ,  G11C16/0483 ,  G11C16/08

Abstract: A nonvolatile memory device comprising a charge pump circuit with pump units connected in series that receives an external voltage for charge pumping and outputs a pump voltage in stages according to stage control signals, a switching circuit that controls the charge pump circuit to output pumping voltages in response to switch control signals, a stage controller that outputs the stage control signals and the switch control signals based on a temperature code, and a digital temperature sensor that generates the temperature code.