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    Sensors and electronic devices
    2.
    发明授权
    Sensors and electronic devices 有权

    公开(公告)号：US11158676B2

    公开(公告)日：2021-10-26

    申请号：US16788857

    申请日：2020-02-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi ,  Ohkyu Kwon ,  Changki Kim ,  Hwang Suk Kim ,  Bum Woo Park ,  Jae Jun Lee

    IPC: H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/50

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

    Sensors and electronic devices
    6.
    发明授权
    Sensors and electronic devices 有权

    公开(公告)号：US11777048B2

    公开(公告)日：2023-10-03

    申请号：US17236439

    申请日：2021-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  In Sun Park ,  Ohkyu Kwon ,  Changki Kim

    IPC: H01L31/101 ,  H01L31/0232

    CPC classification number: H01L31/1013 ,  H01L31/02327

    Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.

    Sensor and electronic device
    7.
    发明授权
    Sensor and electronic device 有权

    公开(公告)号：US12178056B2

    公开(公告)日：2024-12-24

    申请号：US17509451

    申请日：2021-10-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Ohkyu Kwon ,  Changki Kim ,  Insun Park

    IPC: H10K30/10 ,  H10K30/20 ,  H10K30/81 ,  H10K50/11 ,  H10K85/60 ,  H10K101/30 ,  H10K101/40

    Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

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