公开(公告)号：US12120951B2

公开(公告)日：2024-10-15

申请号：US17160860

申请日：2021-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwang Suk Kim ,  Bum Woo Park ,  Ohkyu Kwon ,  Changki Kim ,  In Sun Park ,  Dong-Seok Leem

IPC: H10K85/60 ,  C07D513/04 ,  C07D513/22 ,  C07D517/04 ,  H10K30/20

CPC classification number: H10K85/657 ,  C07D513/04 ,  C07D513/22 ,  C07D517/04 ,  H10K30/20

Abstract: An infrared absorber includes a compound represented by Chemical Formula 1. An infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the infrared absorber.




In Chemical Formula 1, Ar, X1, X2, Y1, Y2, R1, R2, R11, R12, R13, and R14 are the same as defined in the detailed description.

公开(公告)号：US11777048B2

公开(公告)日：2023-10-03

申请号：US17236439

申请日：2021-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  In Sun Park ,  Ohkyu Kwon ,  Changki Kim

IPC: H01L31/101 ,  H01L31/0232

CPC classification number: H01L31/1013 ,  H01L31/02327

Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.

公开(公告)号：US11719867B2

公开(公告)日：2023-08-08

申请号：US17489020

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hoon Won ,  Changki Kim ,  Hyung Jun Kim ,  Yong Joo Lee ,  Myungsup Jung

IPC: G02B1/04 ,  G02B1/11 ,  G02B5/20 ,  G02B5/22 ,  C08K5/23 ,  C09B57/00 ,  C08K5/3417 ,  C08K5/52 ,  C08K3/08 ,  C09B23/08 ,  C09B53/02 ,  H10K30/80 ,  H10K39/32

CPC classification number: G02B5/208 ,  C08K3/08 ,  C08K5/235 ,  C08K5/3417 ,  C08K5/52 ,  C09B23/08 ,  C09B53/02 ,  C09B57/00 ,  C09B57/007 ,  G02B1/04 ,  G02B1/11 ,  G02B5/223 ,  C08K2003/085 ,  H10K30/80 ,  H10K39/32

Abstract: Disclosed are an optical filter including a near infrared absorption layer on a polymer film. The polymer film has a* of about −5.0 to about +5.0 and b* of about −5.0 to about +5.0 in a color coordinate expressed by a CIE Lab color space. The near infrared absorption layer may be configured to transmit light in a visible region and to selectively absorb at least one part of light in a near infrared region. The near infrared absorption layer includes a first near infrared absorption material including a copper phosphate ester compound and a second near infrared absorption material including at least two different organic dyes. The second near infrared absorption material has a maximum absorption wavelength (λmax) in a wavelength region of about 650 nm to about 1200 nm. An electronic device may include the optical filter.

公开(公告)号：US11555132B2

公开(公告)日：2023-01-17

申请号：US16692199

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Joo Lee ,  Mi Jeong Kim ,  Changki Kim ,  Hyung Jun Kim ,  Hye Ran Kim ,  Jong Hoon Won ,  Jae Jun Lee

IPC: C09D143/02 ,  C07F9/09 ,  C08F230/04 ,  C09D5/32 ,  H04N5/225

Abstract: Disclosed are a near-infrared absorbing composition, an optical structure, and a camera module and an electronic device including the same. The near-infrared absorbing composition includes a copper complex represented by Chemical Formula 1. Definitions of Chemical Formula 1 are the same as described in the detailed description.

公开(公告)号：US11158676B2

公开(公告)日：2021-10-26

申请号：US16788857

申请日：2020-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi ,  Ohkyu Kwon ,  Changki Kim ,  Hwang Suk Kim ,  Bum Woo Park ,  Jae Jun Lee

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/50

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

公开(公告)号：US10539725B2

公开(公告)日：2020-01-21

申请号：US15586031

申请日：2017-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hoon Won ,  Yong Joo Lee ,  Changki Kim ,  Hyung Jun Kim ,  Myungsup Jung

IPC: G02B5/20 ,  G02B5/22 ,  G02B5/28

Abstract: An optical filter includes a polymer film and a near infrared absorbing layer on the polymer film, where the near infrared absorbing layer transmits light in a visible wavelength region and selectively absorbs at least a part of light in a near infrared wavelength region. An average light transmittance of the optical filter in a wavelength region of about 700 nanometers (nm) to about 740 nm is less than about 7%.

公开(公告)号：US10017456B2

公开(公告)日：2018-07-10

申请号：US15171453

申请日：2016-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changki Kim ,  Dmitry Androsov ,  Masashi Tsuji ,  Hyunseok Choi

IPC: C07C69/82 ,  C08G64/04 ,  C08L69/00 ,  G02B5/30 ,  C07C69/76

CPC classification number: C07C69/82 ,  C07C69/76 ,  C08G64/045 ,  C08L69/005 ,  G02B1/04 ,  G02B5/3083 ,  C08L49/00

Abstract: A monomer is represented by Chemical Formula 1: wherein in Chemical Formula 1, X1 and X2 are independently O, C(═O), or C(═O)O, R1 to R10 are independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heterocyclic group, a substituted or unsubstituted silyl group, a hydroxy group, a halogen, a nitro group, or a combination thereof, and n1 and n2 are independently an integer ranging from 0 to 3.

公开(公告)号：US10000604B2

公开(公告)日：2018-06-19

申请号：US15148477

申请日：2016-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masashi Tsuji ,  Dmitry Androsov ,  Changki Kim ,  Hyunseok Choi

IPC: C08G64/04 ,  C08G64/28 ,  C08J5/18 ,  G02B5/30

CPC classification number: C08G64/045 ,  C08G64/28 ,  C08J5/18 ,  C08J2369/00 ,  G02B5/3033 ,  G02B5/305 ,  G02B5/3083

Abstract: A polymer including a first structural unit represented by Chemical Formula 1: wherein L1, R1 to R5 and n1 in Chemical Formula 1 are the same as described in the detailed description.

公开(公告)号：US12178056B2

公开(公告)日：2024-12-24

申请号：US17509451

申请日：2021-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Ohkyu Kwon ,  Changki Kim ,  Insun Park

IPC: H10K30/10 ,  H10K30/20 ,  H10K30/81 ,  H10K50/11 ,  H10K85/60 ,  H10K101/30 ,  H10K101/40

Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

公开(公告)号：US11849597B2

公开(公告)日：2023-12-19

申请号：US17485737

申请日：2021-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi ,  Ohkyu Kwon ,  Changki Kim ,  Hwang Suk Kim ,  Bum Woo Park ,  Jae Jun Lee

IPC: H01L27/146 ,  H10K39/32 ,  H10K30/20 ,  H10K30/30 ,  H10K50/11 ,  H10K101/40

CPC classification number: H10K39/32 ,  H01L27/14669 ,  H10K30/20 ,  H10K30/30 ,  H10K50/11 ,  H10K2101/40

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.