利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.017 秒)

    Image sensor, method for manufacturing the same, and image processing device having the image sensor
    1.
    发明授权
    Image sensor, method for manufacturing the same, and image processing device having the image sensor 有权
    图像传感器，其制造方法以及具有图像传感器的图像处理装置

    公开(公告)号：US09287327B2

    公开(公告)日：2016-03-15

    申请号：US14310305

    申请日：2014-06-20

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

    IPC分类号： H04N5/225 ,  H01L27/30 ,  H04N9/04

    CPC分类号： H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

    摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

    摘要翻译： 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

    Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method
    2.
    发明授权
    Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method 有权
    图像传感器，被配置为调节由此吸收的光量，包括其的电子设备和图像感测方法

    公开(公告)号：US09148599B2

    公开(公告)日：2015-09-29

    申请号：US14579857

    申请日：2014-12-22

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

    IPC分类号： H04N5/3745 ,  H04N5/378

    CPC分类号： H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

    摘要： An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

    摘要翻译： 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。