公开(公告)号：US09432604B2

公开(公告)日：2016-08-30

申请号：US14051993

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Chan Kim ,  Min Ho Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Jung Hoon Jung ,  Young Gu Jin

IPC: H04N5/335 ,  H04N5/225 ,  H01L31/062 ,  H01L27/14 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14627 ,  H01L27/14634

Abstract: An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.

Abstract translation: 图像传感器芯片包括第一晶片和第二晶片。 第一晶片包括具有多个子像素的图像传感器，每个子像素被配置为检测至少一个光子并根据检测结果输出子像素信号。 图像处理器被配置为处理每个子像素的子像素信号并生成图像数据。 第一晶片和第二晶片形成为晶片堆叠结构。

公开(公告)号：US09705534B2

公开(公告)日：2017-07-11

申请号：US14842480

申请日：2015-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ho Kim ,  Sung Min Lee ,  Jong Pil Lee ,  Sung Chul Park

IPC: H04B1/44 ,  H04B1/00 ,  H01Q5/30 ,  H04L12/911 ,  H04L5/00

CPC classification number: H04B1/0064 ,  H01Q5/30 ,  H04L5/001 ,  H04L47/827

Abstract: An electronic device is provided, which includes an antenna; and a communication processor configured to transmit and receive a first signal corresponding to a first frequency band through the antenna, and to perform one of transmitting and receiving a second signal corresponding to a second frequency band through the antenna.

公开(公告)号：US10887109B2

公开(公告)日：2021-01-05

申请号：US16009409

申请日：2018-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Soo Chang ,  Kyu Won Kim ,  Min Ho Kim ,  Jong Hoon Park ,  In Jun Son ,  Tae In An ,  So Hyeon Jeon ,  In Myung Choi ,  Ji Yoon Park ,  Dong Hyun Yeom

IPC: H04L9/32 ,  H04L9/08 ,  G06F21/30 ,  G06F21/32

Abstract: Disclosed is an electronic device. The electronic device comprising: a display including a touch screen; a biometric sensor; a communication circuit; a memory; and at least one processor electrically connected to the display, the biometric sensor, the memory, and the communication circuit, wherein the memory stores a plurality of instructions that, when executed, causes the processor to: receive an electronic document from at least one server using the communication circuit; obtain biometric information associated with a user using the biometric sensor; transmit the biometric information associated with the user to the at least one server through the communication circuit; obtain a signature of the user associated with the electronic document using the display; encrypt the obtained signature with specified data associated with the biometric information; and transmit the encrypted signature and at least one of the electronic document and identification information of the electronic document by using the communication circuit.

公开(公告)号：US10275204B2

公开(公告)日：2019-04-30

申请号：US15257529

申请日：2016-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Kim ,  Jong Min Kim ,  Jae Hwan Lee ,  In Hyung Jung ,  Min Ho Kim ,  Jong Wu Baek ,  Cheong Jae Lee

IPC: G09G5/00 ,  G06F3/14 ,  G06F9/50 ,  G06F9/52 ,  G09G5/36 ,  G09G5/377 ,  H04L29/08

Abstract: An electronic device is provided. The electronic device includes an input interface configured to receive first input information relating to a sharing content operation, a communication interface configured to receive second input information relating to the sharing content operation from at least one external electronic device, a memory configured to store at least one instruction relating to processing of the sharing content, and a processor electronically connected to the input interface, the communication interface, and the memory, where the processor, upon executing the least one instruction, is configured to determine collision occurrence possibility of the first input information and the second input information, and to apply a specified effect corresponding to the collision occurrence possibility.

公开(公告)号：US09299561B2

公开(公告)日：2016-03-29

申请号：US14250070

申请日：2014-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keon Hun Lee ,  Min Ho Kim ,  Jong Uk Seo ,  Suk Ho Yoon ,  Kee Won Lee ,  Sang Don Lee ,  Ho Chul Lee

IPC: H01L33/02 ,  H01L21/02 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02576 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/22

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract translation: 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。

公开(公告)号：US10171790B2

公开(公告)日：2019-01-01

申请号：US15448686

申请日：2017-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Il Kim ,  Dong Wook Kwon ,  Min Ho Kim ,  Gi Sang Lee ,  Sang Bo Lee ,  Jin Kyung Lee ,  Young Gu Jin ,  Jin Wuk Choi

IPC: H04N13/00 ,  H04N13/10 ,  H04N13/15 ,  G01S17/08 ,  G01S17/89 ,  H04N13/106 ,  H04N13/257 ,  H04N13/254

Abstract: An image capture method performed by a depth sensor includes; emitting a first source signal having a first amplitude towards a scene, and thereafter emitting a second source signal having a second amplitude different from the first amplitude towards the scene, capturing a first image in response to the first source signal and capturing a second image in response to the second source signal, and interpolating the first and second images to generate a final image.

公开(公告)号：US10134949B2

公开(公告)日：2018-11-20

申请号：US15678462

申请日：2017-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won Jean ,  Min Ho Kim ,  Min Hwan Kim ,  Jang Mi Kim ,  Chul Min Kim ,  Jeong Wook Lee ,  Jae Deok Jeong ,  Yong Seok Choi

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

公开(公告)号：US09871162B2

公开(公告)日：2018-01-16

申请号：US14594058

申请日：2015-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： William Solari ,  Min Ho Kim ,  Heon Ho Lee

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H2) and at least one of ammonia (NH3) and nitrogen (N2). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950° C. to 1040° C.