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公开(公告)号：US09837273B2
公开(公告)日：2017-12-05
申请号：US15223710
申请日：2016-07-29
发明人： Jong-Sub Lee , Kyoung-Ha Eom , Ha-Neul Lee , Sang-Gyo Chung
IPC分类号： H01L21/033 , H01L21/311 , H01L21/3213 , H01L27/108
CPC分类号： H01L21/0337 , H01L21/32139 , H01L27/10844 , H01L27/11582 , H01L28/00
摘要： A method of forming fine patterns of semiconductor devices is disclosed. The method comprises forming a hard mask layer on an etch target, which includes first and second regions. The hard mask layer may further have first and second preliminary mask patterns formed on the same. Furthermore, a spacer layer may be formed on the first and second preliminary mask patterns. The spacer layer and the first and second preliminary mask patterns may be partially removed to form first and second spacers on sidewalls of the first and second preliminary mask patterns, respectively. The second spacer in the second region may have a top surface higher than a top surface of the first spacer in the first region. The height differences between the spacers allow forming of first and second patterns in the first and second regions, and thereby forming fine patterns of semiconductor devices.
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公开(公告)号：US20170103891A1
公开(公告)日：2017-04-13
申请号：US15223710
申请日：2016-07-29
发明人： Jong-Sub LEE , Kyoung-Ha Eom , Ha-Neul Lee , Sang-Gyo Chung
IPC分类号： H01L21/033 , H01L21/311
CPC分类号： H01L21/0337 , H01L21/32139 , H01L27/10844 , H01L27/11582 , H01L28/00
摘要： A method of forming fine patterns of semiconductor devices is disclosed. The method comprises forming a hard mask layer on an etch target, which includes first and second regions. The hard mask layer may further have first and second preliminary mask patterns formed on the same. Furthermore, a spacer layer may be formed on the first and second preliminary mask patterns. The spacer layer and the first and second preliminary mask patterns may be partially removed to form first and second spacers on sidewalls of the first and second preliminary mask patterns, respectively. The second spacer in the second region may have a top surface higher than a top surface of the first spacer in the first region. The height differences between the spacers allow forming of first and second patterns in the first and second regions, and thereby forming fine patterns of semiconductor devices.
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