公开(公告)号：US10199263B2

公开(公告)日：2019-02-05

申请号：US15616334

申请日：2017-06-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-Shin Jang ,  Woo-Kyung You ,  Kyu-Hee Han ,  Jong-Min Baek ,  Viet Ha Nguyen ,  Byung-Hee Kim

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

摘要： A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

公开(公告)号：US10777449B2

公开(公告)日：2020-09-15

申请号：US16242483

申请日：2019-01-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-Shin Jang ,  Woo-Kyung You ,  Kyu-Hee Han ,  Jong-Min Baek ,  Viet Ha Nguyen ,  Byung-Hee Kim

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

摘要： A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

公开(公告)号：US10916437B2

公开(公告)日：2021-02-09

申请号：US16233399

申请日：2018-12-27

申请人： Samsung Electronics Co., Ltd.

发明人： Sang-Shin Jang ,  Jong-Min Baek ,  Hoon-Seok Seo ,  Eui-Bok Lee ,  Sung-Jin Kang ,  Vietha Nguyen ,  Deok-Young Jung ,  Sang-Hoon Ahn ,  Hyeok-Sang Oh ,  Woo-Kyung You

IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/02 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  H01J37/32

摘要： Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.