-
公开(公告)号：US09991203B2
公开(公告)日：2018-06-05
申请号：US15298855
申请日：2016-10-20
发明人： Rak-Hwan Kim , Byung-Hee Kim , Jin-Nam Kim , Jong-Min Baek , Nae-In Lee , Eun-Ji Jung
IPC分类号： H01L29/40 , H01L21/44 , H01L23/528 , H01L21/768 , H01L23/532
CPC分类号： H01L23/5283 , H01L21/76847 , H01L21/76877 , H01L23/53209 , H01L23/53238 , H01L23/53261 , H01L23/53266
摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film, a first trench having a first width, and a second trench having a second width, the second trench including an upper portion and a lower portion, the second width being greater than the first width, a first wire substantially filling the first trench and including a first metal, and a second wire substantially filling the second trench and including a lower wire and an upper wire, the lower wire substantially filling a lower portion of the second trench and including the first metal, and the upper wire substantially filling an upper portion of the second trench and including a second metal different from the first metal.
-
公开(公告)号：US10916437B2
公开(公告)日：2021-02-09
申请号：US16233399
申请日：2018-12-27
发明人： Sang-Shin Jang , Jong-Min Baek , Hoon-Seok Seo , Eui-Bok Lee , Sung-Jin Kang , Vietha Nguyen , Deok-Young Jung , Sang-Hoon Ahn , Hyeok-Sang Oh , Woo-Kyung You
IPC分类号： H01L21/308 , H01L21/033 , H01L21/02 , G03F7/004 , G03F7/20 , G03F7/11 , G03F7/075 , G03F7/09 , H01J37/32
摘要： Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.
-
公开(公告)号：US09812450B2
公开(公告)日：2017-11-07
申请号：US15006265
申请日：2016-01-26
发明人： Jong-Min Baek , Sang-Hoon Ahn , Woo-Kyung You , Byung-Hee Kim , Young-Ju Park , Nae-in Lee , Kyung-Min Chung
IPC分类号： H01L23/522 , H01L27/088 , H01L21/8234
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823475
摘要： A semiconductor device includes a plurality of wiring structures spaced apart from each other, and an insulating interlayer structure. Each of the wiring structures includes a metal pattern and a barrier pattern covering a sidewall, a bottom surface, and an edge portion of a top surface of the metal pattern and not covering a central portion of the top surface of the metal pattern. The insulating interlayer structure contains the wiring structures therein, and has an air gap between the wiring structures.
-
公开(公告)号：US20170133317A1
公开(公告)日：2017-05-11
申请号：US15298855
申请日：2016-10-20
发明人： Rak-Hwan KIM , Byung-Hee Kim , Jin-Nam Kim , Jong-Min Baek , Nae-In Lee , Eun-Ji Jung
IPC分类号： H01L23/528 , H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L23/5283 , H01L21/76847 , H01L21/76877 , H01L23/53209 , H01L23/53238 , H01L23/53261 , H01L23/53266
摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film, a first trench having a first width, and a second trench having a second width, the second trench including an upper portion and a lower portion, the second width being greater than the first width, a first wire substantially filling the first trench and including a first metal, and a second wire substantially filling the second trench and including a lower wire and an upper wire, the lower wire substantially filling a lower portion of the second trench and including the first metal, and the upper wire substantially filling an upper portion of the second trench and including a second metal different from the first metal.
-
公开(公告)号：US10199263B2
公开(公告)日：2019-02-05
申请号：US15616334
申请日：2017-06-07
发明人： Sang-Shin Jang , Woo-Kyung You , Kyu-Hee Han , Jong-Min Baek , Viet Ha Nguyen , Byung-Hee Kim
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532
摘要： A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.
-
公开(公告)号：US10008407B2
公开(公告)日：2018-06-26
申请号：US14955988
申请日：2015-12-01
发明人： Woo-Jin Lee , Byung-Hee Kim , Sang-Hoon Ahn , Woo-Kyung You , Jong-Min Baek , Nae-In Lee
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76807 , H01L21/76816 , H01L21/76849 , H01L21/76885 , H01L23/5222 , H01L23/53295 , H01L2221/1047
摘要： A method of forming a semiconductor device can include forming an insulation layer using a material having a composition selected to provide resistance to subsequent etching process. The composition of the material can be changed to reduce the resistance of the material to the subsequent etching process at a predetermined level in the insulation layer. The subsequent etching process can be performed on the insulation layer to remove an upper portion of the insulation layer above the predetermined level and leave a lower portion of the insulation layer below the predetermined level between adjacent conductive patterns extending through the lower portion of the insulation layer. A low-k dielectric material can be formed on the lower portion of the insulation layer between the adjacent conductive patterns to replace the upper portion of the insulation layer above the predetermined level.
-
公开(公告)号：US09929098B2
公开(公告)日：2018-03-27
申请号：US15048998
申请日：2016-02-19
发明人： Tae-Jin Yim , Sang-Hoon Ahn , Thomas Oszinda , Jong-Min Baek , Byung Hee Kim , Nae-In Lee , Kee-Young Jun
IPC分类号： H01L23/532 , H01L23/528 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76826 , H01L21/76831 , H01L21/76846 , H01L21/76849 , H01L21/76867 , H01L23/5283 , H01L23/53295
摘要： A semiconductor device includes an insulating interlayer on a first region of a substrate. The insulating interlayer has a recess therein and includes a low-k material having porosity. A damage curing layer is formed on an inner surface of the recess. A barrier pattern is formed on the damage curing layer. A copper structure fills the recess and is disposed on the barrier pattern. The copper structure includes a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern. A diffusion of metal in a wiring structure of the semiconductor device may be prevented, and thus a resistance of the wiring structure may decrease.
-
公开(公告)号：US09728604B2
公开(公告)日：2017-08-08
申请号：US15059438
申请日：2016-03-03
发明人： Jin-Nam Kim , Rak-Hwan Kim , Byung-Hee Kim , Jong-Min Baek , Sang-Hoon Ahn , Nae-In Lee , Jong-Jin Lee , Ho-Yun Jeon , Eun-Ji Jung
IPC分类号： H01L29/08 , H01L23/532 , H01L21/768 , H01L23/522 , H01L23/528 , H01L27/088 , H01L27/12
CPC分类号： H01L29/0847 , H01L21/7682 , H01L21/76834 , H01L21/76837 , H01L21/76852 , H01L21/76862 , H01L21/76885 , H01L23/5222 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L27/0886 , H01L27/1211
摘要： Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.
-
公开(公告)号：US20160133577A1
公开(公告)日：2016-05-12
申请号：US15000282
申请日：2016-01-19
发明人： Jong-Min Baek , Sang-Ho Rha , Woo-Kyung You , Sang-Hoon Ahn , Nae-In Lee , Ki-Chul Kim , Jeon-Il Lee
IPC分类号： H01L23/532 , H01L23/522
CPC分类号： H01L23/53238 , H01L21/7682 , H01L21/76834 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76879 , H01L21/76883 , H01L23/5222 , H01L23/5226 , H01L23/528 , H01L23/53223 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.
摘要翻译： 布线结构包括第一绝缘层，多个布线图案，保护层图案和第二绝缘层。 第一绝缘层可以形成在基板上。 可以在第一绝缘层上形成多个布线图案，并且每个布线图案可以包括覆盖金属层图案的侧壁和底表面的金属层图案和阻挡层图案。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。
-
公开(公告)号：US20150179582A1
公开(公告)日：2015-06-25
申请号：US14527842
申请日：2014-10-30
发明人： Jong-Min Baek , Sang-Ho Rha , Woo-Kyung You , Sang-Hoon Ahn , Nae-In Lee , Ki-Chul Kim , Jeon-II Lee
IPC分类号： H01L23/532 , H01L21/768 , H01L23/528
CPC分类号： H01L23/53238 , H01L21/7682 , H01L21/76834 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76879 , H01L21/76883 , H01L23/5222 , H01L23/5226 , H01L23/528 , H01L23/53223 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.
摘要翻译： 布线结构包括第一绝缘层，多个布线图案，保护层图案和第二绝缘层。 第一绝缘层可以形成在基板上。 可以在第一绝缘层上形成多个布线图案，并且每个布线图案可以包括覆盖金属层图案的侧壁和底表面的金属层图案和阻挡层图案。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.018 秒)
