公开(公告)号：US10304734B2

公开(公告)日：2019-05-28

申请号：US16046081

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kyung You ,  Jong Min Baek ,  Sang Shin Jang ,  Byung Hee Kim ,  Vietha Nguyen ,  Nae In Lee ,  Woo Jin Lee ,  Eun Ji Jung ,  Kyu Hee Han

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.

公开(公告)号：US10090381B2

公开(公告)日：2018-10-02

申请号：US15628675

申请日：2017-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin Baek ,  Vietha Nguyen ,  Wookyung You ,  Sangshin Jang ,  Byunghee Kim ,  Kyu-Hee Han

IPC: H01L21/70 ,  H01L21/76 ,  H01L29/06

Abstract: A semiconductor device comprises a lower structure on a substrate and including a recess region, first and second barrier layers covering an inner surface of the recess region and a top surface of the lower structure, the inner surface of the recess region including a bottom surface and an inner sidewall connecting the bottom surface to the top surface of the lower structure, and an interlayer dielectric layer provided on the second barrier layer and defining an air gap in the recess region. A first step coverage is obtained by dividing a thickness of the first barrier layer on an inner sidewall of the recess region by a thickness of the first barrier layer on the top surface of the lower structure. A second step coverage is obtained by dividing a thickness of the second barrier layer on the inner sidewall of the recess region by a thickness of the second barrier layer on the top surface of the lower structure. The first step coverage is different from the second step coverage.

公开(公告)号：US10916437B2

公开(公告)日：2021-02-09

申请号：US16233399

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Shin Jang ,  Jong-Min Baek ,  Hoon-Seok Seo ,  Eui-Bok Lee ,  Sung-Jin Kang ,  Vietha Nguyen ,  Deok-Young Jung ,  Sang-Hoon Ahn ,  Hyeok-Sang Oh ,  Woo-Kyung You

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/02 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  H01J37/32

Abstract: Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.

公开(公告)号：US10062609B2

公开(公告)日：2018-08-28

申请号：US15393506

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kyung You ,  Jong Min Baek ,  Sang Shin Jang ,  Byung Hee Kim ,  Vietha Nguyen ,  Nae In Lee ,  Woo Jin Lee ,  Eun Ji Jung ,  Kyu Hee Han

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76883 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295 ,  H01L2221/1021

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.