公开(公告)号：US09305830B2

公开(公告)日：2016-04-05

申请号：US14535609

申请日：2014-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-yong Park ,  Woon-kyung Lee ,  Jin-taek Park

IPC: H01L21/768 ,  H01L21/311 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC classification number: H01L21/76802 ,  H01L21/311 ,  H01L21/76838 ,  H01L21/76877 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of fabricating a semiconductor device includes forming a stacked structure in which 2n (here, n is an integer which is 2 or more) deposited sacrificial layers and 2n deposited insulating layers disposed on the 2n deposited sacrificial layers respectively are alternately deposited in a third direction perpendicular to a first direction and a second direction on a substrate having an upper surface extending in the first and second directions which are perpendicular to each other. Methods include forming a recess group including 2n−1 first recesses penetrating 20 through 2n−1 deposited sacrificial layers and forming a buried insulating layer group including 2n−1 buried insulating layers filling the 2n−1 first recesses respectively. A contact plug group including 2n contact plugs penetrating an uppermost deposited insulating layer of the 2n deposited insulating layers and the 2n−1 buried insulating layers may be formed.

Abstract translation: 一种制造半导体器件的方法包括形成层叠结构，其中分别沉积有牺牲层的2n（n为2以上的整数）和设置在2n个沉积的牺牲层上的2n个沉积的绝缘层交替地沉积在第三 垂直于第一方向和第二方向的方向在具有在彼此垂直的第一和第二方向上延伸的上表面的基板上。 方法包括形成包括通过2n-1个沉积的牺牲层穿透20的2n-1个第一凹部的凹陷组，并且分别形成包括2n-1个第一凹部的2n-1个掩埋绝缘层的掩埋绝缘层组。 可以形成包括穿过2n个沉积绝缘层的最上层的绝缘层和2n-1个绝缘层的2n个接触插塞的接触插塞组。

公开(公告)号：US09065478B1

公开(公告)日：2015-06-23

申请号：US14549736

申请日：2014-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Je-kook Kim ,  Sang-yong Park ,  Chan-woo Park ,  Young hoon Lee ,  Byeong-ha Park

IPC: H03M1/00 ,  H03M1/66 ,  H03M1/68 ,  H03M1/06

CPC classification number: H03M1/661 ,  H03M1/508

Abstract: A digital-to-analog conversion apparatus to convert a digital signal to an output analog voltage signal includes an analog-to-digital conversion processing circuit and an analog voltage signal output circuit. The analog-to-digital conversion processing circuit is configured to increase a resolution of the digital-to-analog conversion apparatus without increasing a frequency of an input clock signal. The analog voltage signal output circuit is configured to generate the output analog voltage signal based on the input clock signal at the increased resolution of the digital-to-analog conversion apparatus.

Abstract translation: 将数字信号转换为输出模拟电压信号的数模转换装置包括模拟 - 数字转换处理电路和模拟电压信号输出电路。 模数转换处理电路被配置为在不增加输入时钟信号的频率的情况下增加数模转换装置的分辨率。 模拟电压信号输出电路被配置为基于数字模拟转换装置的增加的分辨率的输入时钟信号产生输出模拟电压信号。

公开(公告)号：US20150064902A1

公开(公告)日：2015-03-05

申请号：US14535609

申请日：2014-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-yong Park ,  Woon-kyung Lee ,  Jin-taek Park

IPC: H01L21/768 ,  H01L27/115 ,  H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/311 ,  H01L21/76838 ,  H01L21/76877 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of fabricating a semiconductor device includes forming a stacked structure in which 2n (here, n is an integer which is 2 or more) deposited sacrificial layers and 2n deposited insulating layers disposed on the 2n deposited sacrificial layers respectively are alternately deposited in a third direction perpendicular to a first direction and a second direction on a substrate having an upper surface extending in the first and second directions which are perpendicular to each other. Methods include forming a recess group including 2n−1 first recesses penetrating 20 through 2n−1 deposited sacrificial layers and forming a buried insulating layer group including 2n−1 buried insulating layers filling the 2n−1 first recesses respectively. A contact plug group including 2n contact plugs penetrating an uppermost deposited insulating layer of the 2n deposited insulating layers and the 2n−1 buried insulating layers may be formed.

Abstract translation: 一种制造半导体器件的方法包括形成层叠结构，其中分别沉积有牺牲层的2n（n为2以上的整数）和设置在2n个沉积的牺牲层上的2n个沉积的绝缘层交替地沉积在第三 垂直于第一方向和第二方向的方向在具有在彼此垂直的第一和第二方向上延伸的上表面的基板上。 方法包括形成包括通过2n-1个沉积的牺牲层穿透20的2n-1个第一凹部的凹陷组，并且分别形成包括2n-1个第一凹部的2n-1个掩埋绝缘层的掩埋绝缘层组。 可以形成包括穿过2n个沉积绝缘层的最上层的绝缘层和2n-1个绝缘层的2n个接触插塞的接触插塞组。