Delay locked loop circuit and semiconductor memory device including the same
    2.
    发明授权
    Delay locked loop circuit and semiconductor memory device including the same 有权
    延迟锁定环电路和半导体存储器件包括相同的

    公开(公告)号:US09065455B2

    公开(公告)日:2015-06-23

    申请号:US13777232

    申请日:2013-02-26

    CPC classification number: H03L7/18 G11C7/222 G11C8/18 H03L7/0812

    Abstract: A delay locked loop (DLL) circuit having improved noise characteristics. The DLL circuit includes a first divider for generating a first divided signal by dividing an external clock; a second divider for generating a second divided signal by dividing an internal clock; a phase detector for detecting a phase difference between the first divided signal and the second divided signal; and an adjusting unit for synchronizing the internal clock and the external clock, based on the phase difference.

    Abstract translation: 具有改善的噪声特性的延迟锁定环(DLL)电路。 所述DLL电路包括:第一分频器,用于通过划分外部时钟来产生第一分频信号; 第二分频器,用于通过分割内部时钟来产生第二分频信号; 相位检测器,用于检测第一分频信号和第二分频信号之间的相位差; 以及调整单元,用于基于相位差来同步内部时钟和外部时钟。

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