公开(公告)号：US20240027890A1

公开(公告)日：2024-01-25

申请号：US18180210

申请日：2023-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong Bae ,  Hyun Jung Hwang ,  Heebom Kim ,  Seong-Bo Shim ,  Seungyoon Lee ,  Woo-Yong Jung ,  Chan Hwang

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

Abstract: A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.

公开(公告)号：US08762901B2

公开(公告)日：2014-06-24

申请号：US13626370

申请日：2012-09-25

Applicant: Samsung Electronics Co., Ltd

Inventor： WonChan Lee ,  Seong-Bo Shim ,  Sunghoon Jang ,  Gun Huh

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method for process proximity correction may include obtaining a point spread function (PSF) from test patterns, the test patterns including an etching process performed thereon, generating a target layout with polygonal patterns, dividing the target layout into grid cells, generating a density map including long-range layout densities, each of the long-range layout densities being obtained from the polygonal patterns located within a corresponding one of the grid cells, performing a convolution of the long-range layout densities with the PSF to obtain long-range etch skews for the grid cells, and generating an etch bias model including short-range etch skews and the long-range etch skews, each of the short-range etch skews being obtained from a neighboring region of a target pattern selected from the polygonal patterns in each of the grid cells.

Abstract translation: 用于过程接近校正的方法可以包括从测试图案获得点扩散函数（PSF），测试图案包括在其上执行的蚀刻处理，生成具有多边形图案的目标布局，将目标布局划分成网格单元，生成密度图 包括长距离布局密度，每个长距离布局密度都是从位于相应的一个网格单元内的多边形图案获得的，执行长距离布局密度与PSF的卷积以获得长距离蚀刻 并且产生包括短距离蚀刻偏斜和远距离蚀刻偏斜的蚀刻偏置模型，每个短距离蚀刻偏斜是从选自多边形图案中的目标图案的相邻区域获得的 每个网格单元格。