公开(公告)号：US11456222B2

公开(公告)日：2022-09-27

申请号：US16886237

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Jung ,  Jinsun Kim ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: H01L21/66 ,  G03F7/20

Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.

公开(公告)号：US20240027890A1

公开(公告)日：2024-01-25

申请号：US18180210

申请日：2023-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong Bae ,  Hyun Jung Hwang ,  Heebom Kim ,  Seong-Bo Shim ,  Seungyoon Lee ,  Woo-Yong Jung ,  Chan Hwang

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

Abstract: A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.