公开(公告)号：US10600913B2

公开(公告)日：2020-03-24

申请号：US16100804

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Keun Chung ,  Jong Ho Park ,  Seung Ha Oh ,  Sang Yong Kim ,  Hoon Joo Na ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/775 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L21/283 ,  H01L21/324

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

公开(公告)号：US12249557B2

公开(公告)日：2025-03-11

申请号：US17581084

申请日：2022-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ha Oh ,  Kwang Jin Moon ,  Ho-Jin Lee

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/50 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L23/538 ,  H01L27/088

Abstract: A semiconductor device comprises a substrate that including a frontside comprising an active region and a backside opposite to the frontside, an electronic element on the active region, a frontside wiring structure electrically connected to the electronic element on the frontside of the substrate, and a backside wiring structure electrically connected to the electronic element on the backside of the substrate. The backside wiring structure includes a plurality of backside wiring patterns sequentially stacked on the backside of the substrate, and a super via pattern that intersects and extends through at least one layer of the plurality of backside wiring patterns.

公开(公告)号：US20220384311A1

公开(公告)日：2022-12-01

申请号：US17581084

申请日：2022-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ha Oh ,  Kwang Jin Moon ,  Ho-Jin Lee

IPC: H01L23/48 ,  H01L21/768

Abstract: A semiconductor device comprises a substrate that including a frontside comprising an active region and a backside opposite to the frontside, an electronic element on the active region, a frontside wiring structure electrically connected to the electronic element on the frontside of the substrate, and a backside wiring structure electrically connected to the electronic element on the backside of the substrate. The backside wiring structure includes a plurality of backside wiring patterns sequentially stacked on the backside of the substrate, and a super via pattern that intersects and extends through at least one layer of the plurality of backside wiring patterns.