公开(公告)号：US10910080B2

公开(公告)日：2021-02-02

申请号：US16865675

申请日：2020-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bae Bang ,  Seung Hwan Song ,  Dae Seok Byeon ,  Il Han Park ,  Hyun Jun Yoon ,  Han Jun Lee ,  Na Young Choi

IPC: G11C27/00 ,  G11C11/56 ,  G06F11/10 ,  G11C16/28 ,  G06F3/06 ,  G11C16/26 ,  G11C16/04

Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.

公开(公告)号：US10665312B2

公开(公告)日：2020-05-26

申请号：US16154111

申请日：2018-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bae Bang ,  Seung Hwan Song ,  Dae Seok Byeon ,  Il Han Park ,  Hyun Jun Yoon ,  Han Jun Lee ,  Na Young Choi

IPC: G11C27/00 ,  G11C11/56 ,  G06F11/10 ,  G11C16/28 ,  G06F3/06 ,  G11C16/26 ,  G11C16/04

Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.